Renesas Electronics Corporation

Makoto Shindo

Kazuki Watanabe

Makoto Toyoshima

Yosuke Tanno

Akihiro Toriyama

A semiconductor device includes a processor, a memory, a plurality of tags, a plurality of ways each of which can store a plurality of data of consecutive addresses of the memory in which a tag value stored in each tag of the plurality of tags is taken as a reference address, and a cache controller configured to determine whether a second way has an address change direction flag matching an address change direction flag of the first way and has a tag value continuous with a tag value of the first way in a direction opposite to a direction that the address change direction flag of the first way indicates and prefetch data indicated by a tag value continuous with the tag value of the first way in the direction that the address change direction flag indicates to the second way based on the result of the determination.

Semiconductor device and method for prefetching to cache memory

There is included a detection unit for detecting a magnitude of a surplus of a direct current to a source voltage generated by a voltage generation unit generating the source voltage from the direct current obtained by rectifying a signal inputted from an antenna terminal. A data processing unit operating at the source voltage and performing data processing on a transmission/reception signal includes a clock control unit for determining a frequency of a clock signal for the data processing based on the magnitude of the surplus current detected by the detection unit in a state where a frequency of the clock signal is set to a predetermined reference frequency. Since the power consumed by the data processing unit at the time of detecting the surplus of the direct current is determined by the specific reference frequency, the surplus of the direct current can be detected as an absolute surplus.

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Kanagawa, Japan

Makoto Shindo