Sony Corporation

Kabushiki Kaisha Toshiba

Fuji Photo Film Company, Limited

Micron Technology Incorporated

Nippon Telegraph and Telephone Corporation

Other

Makino Milling Machine Company, Ltd

Fujifilm Corporation

Kabushikikaisha Kenwood

Panasonic Corporation

Sumitomo Electric Industries, Limited

Sumitomo Chemical Company, Limited

Yamaha Hatsudoki Kabushiki Kaisha

Toshiba Medical Systems Corporation

Japan Tobacco Inc.

Makoto Sato

Yoshio Osakabe

Akira Katsuyama

Ryota Suzuki

Hisato Shima

Kazuo Hiraguchi

Koichi Sugiyama

Seiji Kobayashi

Tatsuya Igarashi

Shozo Onmori

Kiyoo Morita

Tomoyuki Asano

Yoshitomo Osawa

Shigeo Tanaka

Hiroshi Yamazaki

Hirokazu Matsumoto

Hirofumi Morita

Masahiko Mawatari

Takayuki Suzuki

Satoshi Ishikawa

Kaoru Inoue

Takuro Noda

Masahiko Sato

Ryuji Ishiguro

Yasuo Kusagaya

Noriko Kotabe

Kouichi Sugiyama

Fusao Shimokawa

Satoshi Aramaki

Kazuyoshi Miyachi

Kaoru Iida

Shouji Makita

Takayoshi Ose

Harumi Kawamura

Yuko Iijima

Shingo Uchiyama

Katsuyuki Machida

Nobuaki Suzuki

Tatsuyuki Ohashi

Ryouhei Chiba

Hiromu Ishii

Johji Yamaguchi

Shuichiro Inagaki

Makoto Murakami

Kazuaki Taga

Yoshiaki Hasegawa

Mitsuhiro Makihara

Kyoka Egami

Ryohei Chiba

Tamotsu Ikeda

Katsuyuki Tanaka

Shigehide Kuhara

Satoshi Sugiura

Hidekazu Tanaka

Kazuhito Saito

Hideo Kobayashi

Hiroshi Kakuda

Yoshitomo Sakakura

Shinya Adachi

Minoru Yonezawa

Hitoshi Tomiyama

Toshiyuki Hiroi

Tomoko Tanaka

Hiroyuki Mizuno

Hiroshi Sugimoto

Hiroyuki Mita

Koji Kitamura

Yoriko Komatsuzaki

Yutaka Kato

Takurou Noda

Tetsuya Mochizuki

Kunihiko Sasakura

Mitsuki Koda

Akihiro Suyama

Nanae Yokoyama

Naoto Murao

Hiroyoshi Togo

Kazuto Nogami

Kazuyuki Hiramoto

Yoshiaki Ishino

Nobuhiro Ono

Tomoyuki Yoshida

Takeo Tsutsumi

Masateru Iwasa

Yasutake Yasuhara

Yoshiteru Kanomata

Yasuhide Nishida

Norichika Kojima

Kazunari Sumiyoshi

Taketo Kawakami

Hidetomo Itoh

Takashi Yanashima

Yoshihide Mochizuki

Mitsugu Yamagishi

Takashi Hirooka

Yukihiro Hirata

Norio Nagashima

Disclosed herein is an apparatus that includes: a memory cell array including a plurality of first memory cell mats arranged in a first direction; a first voltage line supplied with a first voltage, the first voltage line extending in the first direction and being connected to a plurality of first vias each arranged over a corresponding one of even numbered ones of the plurality of first memory cell mats; and a second voltage line supplied with a second voltage different from the first voltage, the second voltage line extending in the first direction and being connected to a plurality of second vias each arranged over a corresponding one of odd numbered ones of the plurality of first memory cell mats.

Semiconductor device having plural memory cell mats and multiple voltage lines

Apparatuses including semiconductor layout to mitigate local layout effects are disclosed. An example apparatus includes a plurality of standard cells each including an active region, an isolation region adjacent the active region, and a first gate structure disposed on the active region and the isolation region. The first gate structure includes a first gate portion disposed on the active region, and a first contact portion disposed on the isolation region. The apparatus further includes a second gate structure disposed on the active region and the isolation region. The second gate structure includes a second gate portion disposed on the active region, and a second contact portion disposed on the isolation region. In the apparatus, a distance between a first contact point and the first gate portion is substantially equal to a distance between a second contact point and the second gate portion.

Apparatuses including semiconductor layout to mitigate local layout effects

Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second STI regions arranged in a first direction, a first diffusion region having a first conductivity type surrounded by the first STI region, a second diffusion region having a second conductivity type surrounded by the second STI region, and a third diffusion region extending in a second direction such that the third diffusion region is arranged between the first and second STI regions; a first gate electrode including a first polycrystalline silicon film covering a part of the first diffusion region to form a P-channel MOS transistor; a second gate electrode including a second polycrystalline silicon film covering a part of the second diffusion region to form an N-channel MOS transistor; and a third polycrystalline silicon film extending in the second direction such that the third polycrystalline silicon film covers the third diffusion region.

Semiconductor device having STI regions

Embodiments of the disclosure are drawn to arrangements of one or more 'cuts' or pattern of cuts in conductive structures. Wiring layers may each include a cut pattern including a set of cuts through conductive structures of the wiring layers where each of the cuts is offset from the other in a direction orthogonal to the cut. The cut pattern in a wiring layer may be orthogonal to the cut pattern in another wiring layer. In some examples, the cut pattern may be a stair-step pattern. In some examples, the cut pattern may be interrupted by other conductive structures.

Apparatuses including conductive structure layouts

Some embodiments include an apparatus having a well region extending into a semiconductor substrate. A first conductive element is over the well region, and a second conductive element is over the first conductive element. A hole extends through the first conductive element. A connecting element extends from the second conductive element to the well region, and passes through the hole.

Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure

One embodiment provides a communication device for transmitting a video to an external device through first to third transmission lines, the communication device including: a transmission module configured to transit first color difference information and second color difference information concerned with adjacent two pixels through the first transmission line, to transmit first luminance information concerned with one of the two pixels through the second transmission line, and to transmit second luminance information concerned with the other of the two pixels through the third transmission line.

Communication device and communication method

Apparatuses with a gate electrode in a semiconductor device are described. An example apparatus includes an active region surrounded by an isolation region, and a gate electrode extending in a first direction to pass over the active region. The gate electrode includes a body gate portion over the active region, the body gate portion having a first gate length in a second direction perpendicular to the first direction, a lead-out portion over the isolation region, the lead-out portion having a second gate length in the second direction, the second gate length being greater than the first gate length, and a hammer-head portion having a first end in contact with the body gate portion and a second end opposite to the first end in contact with the hammer-head portion.

Gate electrode layout with expanded portions over active and isolation regions

Embodiments of the disclosure are drawn to apparatuses and methods for trench walls including widened portions and/or conductive structures including constricted portions. The trench walls may include multiple widened portions spaced apart along a length of the trench wall in some examples. Similarly, in some examples, the conductive structures may include multiple constricted portions spaced apart along a length of the conductive structure. In some examples, the dimensions of the widened portions and/or the spacing between the widened portions may be based on properties of the trench wall.

Trench walls, conductive structures having different widths and methods of making same

One embodiment provides a communication device for transmitting a video to an external device through first to third transmission lines, the communication device including: a transmission module configured to transmit first color difference information and second color difference information concerned with adjacent two pixels through the first transmission line, to transmit first luminance information concerned with one of the two pixels through the second transmission line, and to transmit second luminance information concerned with the other of the two pixels through the third transmission line.

A clutch structure includes a clutch input shaft, a clutch output shaft, a weight member, a one-way clutch, and a bearing. The weight member frictionally contacts a cylindrical portion of the clutch output shaft to transmit a rotational power from the clutch input shaft to the clutch output shaft and separates from the cylindrical portion to disconnect the transmission of the rotational power. When the weight member separates from the cylindrical portion and a rotational frequency of the clutch input shaft falls below a rotational frequency of the clutch output shaft, the one-way clutch links an input shaft portion of the clutch input shaft and an output shaft portion of the clutch output shaft. The one-way clutch and the bearing are located between the input shaft portion and the output shaft portion.

Clutch structure

The present technology relates to a signal processing apparatus and method which can suppress increase in power consumption. In an aspect of the present technology, control data, which is for controlling frequency modulation to a carrier signal using digital data to be transmitted, and for suppressing a time average of a fluctuation amount of a frequency modulation amount more than a case of controlling the frequency modulation to the carrier signal using the digital data is generated, the frequency modulation is performed to the carrier signal on the basis of the generated control data, and the carrier signal to which the frequency modulation is performed is transmitted as a transmission signal. The present technology can be applied to, for example, a signal processing apparatus, a transmission apparatus, a reception apparatus, a communication apparatus, or an electronic apparatus having a transmission function, a reception function, or a communication function, or a computer which controls these.

Signal processing apparatus and method

Some embodiments include an apparatus having first, second, third and fourth wiring tracks. The first and third wiring tracks sandwich the second wiring track therebetween, and the second and fourth wiring tracks sandwich the third wiring track therebetween. A lower-level wiring layer includes a first wiring which has a first portion extending along the second wiring track, a second portion extending along the first wiring track, and a third portion extending along the third wiring track. An upper-level wiring layer includes a second wiring electrically connected to the first wiring and having a fourth portion extending along the third wiring track. The third portion of the first wiring is coupled with the fourth portion of the second wiring.

Assemblies having shield lines of an upper wiring layer electrically coupled with shield lines of a lower wiring layer

An object of the present invention is to provide a saddle-type vehicle which can switch between the parking brake state and the neutral state using a clutch actuator configured to operate the clutch and thus lower the manufacturing cost. According to the present disclosure, there is provided a saddle-type vehicle which can be driven by a driver sitting on a seat and steering a bar handle. The saddle-type vehicle can comprise a clutch arranged on a power transmitting path from a driving source to a wheel (or wheels) configured to selectively transmit a driving power of the driving source to the wheel and selectively cut off the transmission of driving power of the driving source; a transmission arranged on the power transmitting path configured to shift gears in accordance with the travelling state of the vehicle; and a clutch actuator comprising an electrically operated actuator configured to actuate the clutch, wherein the clutch can be switched by the clutch actuator between a parking brake state, in which the power transmission between the driving source and the driving wheel is performed under a stopped state of the driving source, and a neutral state, in which the power transmission between the driving source and the driving wheel is cut off.

Saddle-type vehicle

Growing community of inventors

Kanagawa, Japan

Makoto Sato