Sumitomo Chemical Company, Limited

National Institute for Materials Science

Makoto Sasaki

Shinichi Morishima

Masaya Shimizu

Norihito Ito

Tetsushi Taguchi

Yoshihiko Tsuchida

Yasuyuki Katada

Provided is a bio-hybrid material that does not cause elution of nickel ions and has an excellent endothelialization ability, a production method therefor, and a stent. The bio-hybrid material () used includes an alloy part () free of Ni, an organic acid () having two or more active esters, and a cytokine (). The alloy part () free of Ni forms an ester bond with the organic acid (), and the organic acid () and the cytokine () are immobilized via an amide bond.

Bio-hybrid material, production method therefor, and stent

The present invention provides a method for manufacturing an organic EL device. When an organic EL element which is composed of a pair of electrodes in which at least one of the electrodes is transparent or translucent, and an organic EL layer which comprises a light-emitting layer held between the electrodes, and a sealing layer which includes at least one layer of inorganic film being in contact with the organic EL element and which seals the organic EL element are formed on a substrate, a first sealing film which is included in the sealing layer and in contact with the organic EL element is formed by the facing target sputtering method, and the other inorganic film which is included in the sealing layer is formed by any method other than the facing target sputtering method.

Method for manufacturing organic electroluminescence device

The present invention is intended to provide a method for manufacturing an organic EL device, which method can form a film having high barrier properties to water vapor or oxygen, while suppressing damage to an organic EL element, during formation of the film including inorganic layers for sealing the organic EL element. When an organic EL element () which is composed of a pair of electrodes in which at least one of the electrodes being transparent or translucent and an organic EL layer () which comprises a light-emitting layer held between the electrodes, and a sealing layer () which includes at least one layer of inorganic film being in contact with the organic EL element () and which seals the organic EL element () are formed on a substrate (), a first sealing film () which is included in the sealing layer () and which is in contact with the organic EL element () is formed by ion beam sputtering method, and the other inorganic film which is included in the sealing layer () is formed by any method other than the ion beam sputtering method.

A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InGaAlN (wherein x+y+z=1, 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x2266;z&#x3c;1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.

Compound semiconductor and method for producing same

A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InGaAlN (wherein, 0&#x2266;u&#x2266;1, 0&#x2266;v&#x2266;1, 0&#x2266;w&#x2266;1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InGaAlN (wherein, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 &#x212b; and not more than about 90 &#x212b;. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InGaAlN on a substrate to give a thickness of at least about 5 &#x212b; and not more than about 90 &#x212b; at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InGaAlN on the buffer layer.

Growing community of inventors

Tsukuba, Japan

Makoto Sasaki