Sony Corporation

Makoto Oogane

Hironobu Narui

Nobukata Okano

Sachio Karino

Tsuyoshi Nagatake

Eiji Takase

Michiru Kamada

Hiroyuki Okuyama

Masafumi Ata

Takahiro Koyama

Takayuki Kawasumi

Hiroki Naito

Arata Kobayashi

Ryuichiro Maruyama

Kensuke Kojima

A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus

A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

Semiconductor light-emitting device

Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a &#x3c;110&#x3e; direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the &#x3c;110&#x3e; direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer

Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

Semiconductor light emitting device

An electrochemical hydrogen flow rate control system is provided. The system has an electrochemical cell and a hydrogen flow rate control unit. The electrochemical cell includes a first electrode for generating protons (H), a second electrode for converting the protons generated by said first electrode into hydrogen gas, and a proton conductive solid electrolyte membrane held between said first and second electrodes. The hydrogen flow rate control unit is adapted to generate a specific amount of hydrogen gas on the second electrode side. The proton conductive solid electrolyte membrane is made from a fullerene derivative obtained by introducing proton dissociative groups in carbon atoms of fullerene molecules. Such a control system is operable even in a non-humidified atmosphere and at room temperature and is configurable as lightweight and compact in system design.

Electrochemical hydrogen flow rate control system

Growing community of inventors

Kanagawa, Japan

Makoto Oogane