Hitachi, Ltd.

Hitachi Displays, Ltd.

Hitachi-high-technologies Corporation

Hitachi Metals, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Tekna Plasma Systems Inc.

Makoto Okai

Motoyuki Hirooka

Kazuhisa Uomi

Naoki Chinone

Shinji Sakano

Shinji Tsuji

Tomio Yaguchi

Nobuaki Hayashi

Takahiko Muneyoshi

Kishio Hidaka

Tomonobu Tsuchiya

Tsukuru Ohtoshi

Masahiro Watanabe

Toshihiko Nakata

Takashi Inoue

Masakazu Sagawa

Toshiaki Kusunoki

Mutsumi Suzuki

Akitoshi Ishizaka

Takayuki Tsutsui

Takeshi Shimano

Atsushi Nakamura

Masahiro Aoki

Susumu Sasaki

Toshiaki Morita

Yasuo Wada

Tatemi Ido

Takao Kuroda

Akihiko Oka

Atsuko Niwa

Yoshiyuki Kaneko

Shigeyuki Nishitani

Shuichi Suzuki

Tomoki Nakamura

Shoichi Uchino

Kiyoshige Kinugawa

Tadashi Fujieda

Toshio Abe

Shigemi Hirasawa

Hiroyoshi Matsumura

Etsuko Nishimura

Tatsuo Harada

Mitsuo Hayashibara

Toshiaki Kita

Hiroshi Kawasaki

Tetsuya Yamazaki

Motohisa Hirao

Shunichi Watanabe

Akiko Iwata

Takashi Kyotani

Hisao Nakashima

Hideya Yamane

Akio Ohishi

Hideki Yamaura

Hironori Orikasa

Kazutoshi Sugie

Hideki Taira

Provided is a method for producing a boron nitride nanotube-reinforced aluminum composite casting, the method being capable of reducing cost. The method for producing a boron nitride nanotube-reinforced aluminum composite casting comprises the steps of: (a) mixing boron nitride nanotubes and a first aluminum matrix and then pelletizing the resulting mixture; (b) heating and subjecting pellets obtained in step (a) to melt mixing to obtain a melt; (c) cooling and solidifying the melt obtained in step (b) to obtain a master batch; and (d) subjecting the master batch obtained in step (c) and the second aluminum matrix to melt mixing, and then cooling and solidifying the resulting mixture.

Method for producing boron nitride nanotube-reinforced aluminum composite casting

To provide a negative electrode material having a high initial capacity and a long charge and discharge cycle life A negative electrode material according to the present invention contains a particle of a negative electrode active material that occludes and releases lithium ions and a carbon fiber, wherein the negative electrode active material occludes lithium by forming an alloy with the lithium, a surface of the negative electrode active material particle is coated with carbon, and the carbon fiber is bonded to the surface of the carbon via an adhesive resin.

Negative electrode material for lithium ion secondary battery and manufacturing method of the same, negative electrode for lithium ion secondary battery and manufacturing method of the same, and lithium ion secondary battery

Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force.

Scanning probe microscope and method of observing sample using the same

Provided are an electronic device and a light-receiving and light-emitting device which can control the electron configuration of a graphene sheet and the band gap thereof, and an electronic integrated circuit and an optical integrated circuit which use the devices. By shaping the graphene sheet into a curve, the electron configuration thereof is controlled. The graphene sheet can be shaped into a curve by forming the sheet on a base film having a convex structure or a concave structure. The local electron states in the curved part can be formed by bending the graphene sheet. Thus, the same electron states as the cylinder or cap part of a nanotube can be realized, and the band gaps at the K points in the reciprocal lattice space can be formed.

Electronic device, light-receiving and light-emitting device, electronic integrated circuit and optical integrated circuit using the devices

A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.

Graphene grown substrate and electronic/photonic integrated circuits using same

A circuit board having a graphene circuit according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of AlO(where x is 0 or more), the patterned aluminum oxide film having a recessed region whose surface has one or more cone-shaped recesses therein; a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film having a contact region that covers the recessed region, the graphene film growing parallel to a flat surface of the recessed region and parallel to an inner wall surface of each cone-shaped recess of the recessed region; and a patterned metal film, a part of the patterned metal film covering and having electrical contact with the contact region, the patterned metal film filling each recess covered by the graphene film.

Circuit board including a graphene film having contact region covering a recessed region and a patterned metal film covering the contact region and in direct electrical contact therewith, and device including same

The stress due to contact between a probe and a measurement sample is improved when using a microcontact prober having a conductive nanotube, nanowire, or nanopillar probe, the insulating layer at the contact interface is removed, thereby the contact resistance is reduced, and the performance of semiconductor device examination is improved. The microcontact prober comprises a cantilever probe in which each cantilever is provided with a nanowire, nanopillar, or a metal-coated carbon nanotube probe projecting by 50 to 100 nm from a holder provided at the fore end and a vibrating mechanism for vibrating the cantilever horizontally with respect to the subject. The fore end of the holder may project from the free end of the cantilever, and the fore end of the holder can be checked from above the cantilever.

Micro contact prober

A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of AlO(where x is 0 or more); and a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film having an electrical conductivity of 1&#xd7;10S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.

In a scanning probe microscope, a nanotube and metal nano-particles are combined together to configure a plasmon-enhanced near-field probe having an optical resolution on the order of nanometers as a measuring probe in which a metal structure is embedded, and this plasmon-enhanced near-field probe is installed in a highly-efficient plasmon exciting unit to repeat approaching to and retracting from each measuring point on a sample with a low contact force, so that optical information and profile information of the surface of the sample are measured with a resolution on the order of nanometers, a high S/N ratio, and high reproducibility without damaging both of the probe and the sample.

An device according to the present invention comprises: graphene; and a metal electrode, the metal electrode and the graphene being electrically connected, the following relationship of Eq. (1) being satisfied: where r(in units of &#x3a9;/&#x3bc;m) denotes the electrical resistance of a graphene layer per unit area, r(in units of &#x3a9;&#x3bc;m) denotes the contact resistance per unit area between the graphene layer and a metal electrode, and S denotes the contact area (in units of &#x3bc;m) between the graphene layer and the metal electrode.

Electrically connected graphene-metal electrode device, and electronic device, electronic integrated circuit and electro-optical integrated circuit using same

In an image display apparatus using an FED or an organic EL element, image display that is high in illumination uniformity and high in image quality can be performed. A display element with a matrix structure which conducts linear sequential driving which determines the luminance by a current is used, a threshold voltage of a cathode line immediately before one select period has been terminated where a control electrode line is sequentially driven is measured by a threshold voltage measuring section, the measured threshold voltage is recorded for each of the pixels, and a driving signal at the time of selecting the pixel is corrected by using the value of the recorded threshold voltage, to thereby control electric charge that is emitted from a cathode.

Flat panel display apparatus

The transparent conductive film according to the present invention comprises graphene platelets which overlap one another to form a multilayer structure. The average size of the graphene platelets is 50 nm or more and the number of layers of the graphene platelets is 9 or less. The transparent conductive film has an electrical resistivity of 1.0&#xd7;10(&#x3a9;m) or less and a light transmission at a wavelength of 550 nm of 80% or more.

Transparent conductive film and electronic device including same

The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

Field emission electron gun and electron beam applied device using the same

Using a cathode material with which an electron emission having sufficient intensity is obtained with a low electric field, over a back substrate, cathodes and first control electrodes are formed on the same plane, which is parallel to the back substrate, thus forming electron beam sources, and second control electrodes, which focus electrons taken out from the electron beam sources, are formed, whereby it is possible to obtain an image display of high brightness.

Flat panel display device including electron beam sources and control electrodes

Growing community of inventors

Tokorozawa, Japan

Makoto Okai