Kabushiki Kaisha Toshiba

Makoto Okada

Koichi Genei

Koichi Gen-ei

Akira Tanaka

Seiji Iida

Masaki Tohyama

Takayuki Matsuyama

Kazuo Fukuoka

Osamu Horiuchi

According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer.

Semiconductor laser device

A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 &#x3bc;m or less. The one end surface serves as a light emitting surface.

A semiconductor laser chip has an emission facet for emitting a laser beam. A sub-mount has a first surface and at least one second surface vertical to the first surface. The semiconductor laser chip is provided on the first surface of the sub-mount. The second surface arranged in line with the emission facet of the semiconductor laser chip is inclined at an angle of 3 to 30 degrees. The inclined second surface reflects reflection light of a sub-beam diffracted from a main beam emitted by the semiconductor laser chip.

Semiconductor laser device which removes influences from returning light of three beams and a method of manufacturing the same

A semiconductor laser of present invention is constructed by an aluminium oxide (Al O ) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiN , or Si N ) film on the aluminium oxide film, and a silicon oxide (SiO ) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.

Semiconductor laser and method of manufacturing the same

A monolithic two-wavelength semiconductor laser device includes a front end face film on a resonator front end face , and a high-reflectivity end face film as a multilayered film on a resonator rear end face . The front end face film is formed using a low-refractive-index material, and the film thickness is so set that the reflectivity is 20%. The high-reflectivity end face film is formed by alternately stacking thin films of low- and high-refractive-index materials, and the film thickness is so set that the reflectivity is 80%. The film thickness of each of these two end face films is calculated by an optical length d&equals;(&frac14;&plus;j)&times;&lgr;m by using a mean value &lgr;m&equals;(&lgr;1&plus;&lgr;2)/2 of the oscillation wavelengths of the two semiconductor laser diodes. This makes it possible to obtain an end face film having a desired reflectivity and capable of being formed at once, and to fabricate a two-wavelength semiconductor laser device having high reliability, meeting the required performance, and also having high productivity.

Semiconductor laser device and method of fabricating the same

A semiconductor laser of present invention is constructed by an aluminum oxide (Al O ) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiN , or Si N ) film on the aluminum oxide film, and a silicon oxide (SiO ) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.

Growing community of inventors

Chiba-ken, Japan

Makoto Okada