Yokogawa Electric Corporation

Makoto Noro

Takashi Yoshida

Atsushi Yumoto

Shigeto Iwai

Kentaro Suzuki

Hideto Iwaoka

Yusaku Yoshida

Shuhei Yoshita

Naoki Kishi

Hitosh Hara

A resonant pressure sensor with improved linearity includes: a substrate including a substrate-separated portion separated from a housing-fixed portion; a first resonator that: is disposed in the substrate-separated portion; and detects a change of a first resonance frequency based on a strain in the substrate caused by static pressure applied by a pressure-receiving fluid; a second resonator that: is disposed in the substrate; detects a change of a second resonance frequency based on the strain in the substrate; and has a pressure sensitivity of the second resonance frequency; and a processor that: measures the static pressure based on the detected change of the first resonance frequency; and corrects the static pressure according to internal temperature of the pressure sensor based on a difference between the second resonance frequency and the first resonance frequency.

Resonant pressure sensor with improved linearity

A resonant pressure sensor with improved linearity includes a substrate including a substrate-fixed portion fixed to a housing-fixed portion and a substrate-separated portion separated from the housing-fixed portion in a first direction; a first resonator disposed in the substrate-separated portion to detect a change of a resonance frequency based on a strain caused by static pressure applied by a pressure-receiving fluid interposed in a gap between the housing-fixed portion and the substrate; a first electrode extending along a second direction to output an excitation signal to the first resonator; a second electrode that extends along the second direction and from which the first resonator outputs a signal having the resonance frequency; and a processor that measures the static pressure based on the detected change.

Resonant pressure sensor with imporved linearity

A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1&#xd7;10(cm) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

Resonant transducer

A resonant sensor device includes a base and a detection substrate. The detection substrate includes a movable portion configured to move in a first direction, a supporter includes one or more supporting portions which extend in a direction along an intersecting plane intersecting the first direction, an intermediate fixing portion which is connected to the movable portion via the supporter, a connection portion which connects a mounting portion fixed to the base to the intermediate fixing portion in a second direction that is one direction along the intersecting plane, and a resonator at least partially embedded in the one or more supporting portions. The maximum dimension of the connection portion in a third direction orthogonal to the second direction in the intersecting plane is smaller than a maximum dimension of the supporter in the third direction.

Resonant sensor device

A Fabry-Perot filter device for selectively transmitting three wavelength bands of infrared radiation, including a reference light band, wherein the filter device comprises a fixed mirror formed on a substrate; a movable mirror arranged opposite to the fixed mirror with a gap formed therebetween so that the movable mirror is displaced with respect to the fixed mirror by applying an external force; a fixed electrode formed on the fixed mirror; and a movable electrode formed on the movable mirror and arranged opposite to the fixed electrode wherein the movable electrode is displaced by applying a potential difference across the fixed and movable electrodes so that the width of the gap is varied in at least three steps, whereby at least three wavelength bands of infrared radiation are selectively transmitted through the filter device.

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Tokyo, Japan

Makoto Noro