Hitachi-high-technologies Corporation

Makoto Nishihara

Makoto Ezumi

Masashi Fujita

Seiichiro Kanno

Yuko Sasaki

Toshiaki Yanokura

Tsutomu Kawai

Osamu Komuro

Zhaohui Cheng

Naoya Ishigaki

Yasushi Ebizuka

Kumiko Shimizu

Shunsuke Koshihara

Kyoungmo Yang

Hiroyuki Matsui

The present invention provides a high-throughput scanning electron microscope in which a wafer () is held by an electrostatic chuck (), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer () is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (). A drill hole is provided on the rear surface of the electrostatic chuck (), and a thermometer () is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer () is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (), and measuring begins at individual measurement sites after the measurement limit time has elapsed.

Charged particle radiation apparatus

Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.

Charged particle beam apparatus for removing charges developed on a region of a sample

An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck. In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism () in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source () to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.

Charged particle beam apparatus

In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.

Charged particle beam scanning method and charged particle beam apparatus

To create a template for use in image recognition based on design data, luminance information is set for each area in the template based on the information regarding the region defined by the template. The luminance information may be set based on material information, pattern size information of a pattern arranged in the region defined by the template, and layer information of the region defined by the template. Alternatively, luminance information may be set based on material information, setup conditions of the scanning electron microscope, and pattern outline information of a pattern arranged in the region defined by the template.

Template creation method and image processor therefor

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Hitachinaka, Japan

Makoto Nishihara