Oki Electric Industry Co., Ltd.

Makoto Nakazawa

Toshio Nagata

The surface form of a semiconductor thin film such as a polysilicon film formed on a semiconductor substrate is measured through spectro-ellipsometry or measured by performing an IPA quantitative analysis through GC. Mass (gas chromatography) after exposing the semiconductor thin film to IPA (isopropyl alcohol) vapor and drying the semiconductor thin film. Through either of these methods, the surface form of the polysilicon film can be easily and quickly measured.

Method of measuring surface form of semiconductor thin film

The surface form of a semiconductor thin film such as a polysilicon film formed on a semiconductor substrate is measured through spectro-ellipsometry or measured by performing an IPA quantitative analysis through GC. Mass (gas chromatography) after exposing the semiconductor thin film to IPA (isopropyl alcohol) vapor and drying the semiconductor thin film. Through either of these methods the surface form of the polysilicon film easily and quickly measured.

A lower capacitor electrode is formed on an interlayer dielectric, and then a resultant specimen is subjected to reduction and thermal nitriding in an ammonia gas atmosphere in a deposition chamber wherein pressure has been reduced to a range from 533 Pa to 1333 Pa. A silicon nitride film is then formed on the lower electrode and the interlayer dielectric. A time for carrying out the reduction and thermal nitriding is longer than a film thickness saturation time of the silicon nitride film formed on the interlayer dielectric.

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Miyagi, Japan

Makoto Nakazawa