Sharp Kabushiki Kaisha Corporation

Makoto Nakazawa

Fumiki Nakano

Shigeyasu Mori

Kazuatsu Ito

Kiyoshi Minoura

Takatoshi Orui

Mitsunobu Miyamoto

Rikiya Takita

Hiroyuki Moriwaki

Seiichi Uchida

Tadayoshi Miyamoto

Yasuyuki Ogawa

Seiji Kaneko

Wataru Nakamura

Yohsuke Kanzaki

Takao Saitoh

Tadashi Ohtake

Takuya Matsuo

Yutaka Takamaru

Akinori Kubota

Tomohiro Kimura

Kazuhide Tomiyasu

Tetsuya Tanishima

A photoelectric conversion panel includes a thin-film transistor provided in a first region, a photoelectric conversion element provided in the first region, a first organic film having a first groove portion provided in a second region, a second organic film having a second groove portion provided in the second region and in a position different from that of the first groove portion, a first inorganic film formed so as to cover the first organic film and cover an inner surface of the first groove portion, and a second inorganic film formed so as to cover the second organic film and cover an inner surface of the second groove portion.

Photoelectric conversion panel

An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

X-ray imaging panel and method of manufacturing X-ray imaging panel

A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

Photoelectric conversion device and X-ray imaging device

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

Photoelectric conversion panel and method for manufacturing photoelectric conversion panel

An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

Imaging panel and imaging panel substrate assembly

An active matrix substrate includes a photoelectric conversion element, a first inorganic insulating film, a first planarizing film, and a second inorganic insulating filmand/oron a substrate. The first inorganic insulating film, the first planarizing film, and the second inorganic insulating filmand/orare provided up to an end Pof the substrate. The first inorganic insulating filmcovers a surface of the photoelectric conversion element, the first planarizing filmhas a tapered portion, and an angle &#x3b8; between the tapered portion and the first inorganic insulating filmis an acute angle. The second inorganic insulating filmand/orcovers the first planarizing film

Active matrix substrate and imaging panel with same

An active matrix substrate includes: a photoelectric conversion element; an electrodeprovided with a first opening hand disposed on one surface of the photoelectric conversion element; an organic insulating filmprovided with a second opening hand covering the photoelectric conversion elementand the electrode; and a conductive filmfor supplying a bias voltage to the electrode. The first opening hand the second opening hoverlap each other when viewed in plan view. The conductive filmis provided inside the first opening hand the second opening hso as to be in contact with the electrode

Active matrix substrate, X-ray imaging panel with the same, and method for producing the same

An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.

Imaging panel

An active matrix substrate includes a photoelectric conversion element, a first planarizing film, a first inorganic insulating film, and a bias wire. The first planarizing filmcovers the photoelectric conversion elementand has a first openingat a position at which the first openingoverlaps with the photoelectric conversion elementin plan view. The first inorganic insulating filmhas a second opening on an inner side of the first opening h and covers a surface of the first planarizing film. The bias wireis provided on a first inorganic insulating filmand is connected to the photoelectric conversion elementvia the second opening CH

An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

Active matrix substrate, and x-ray imaging panel

An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Imaging device and X-ray imaging device

The scanning antenna () is a scanning antenna in which antenna units (U) are arranged, the scanning antenna including: a TFT substrate () including: a first dielectric substrate (), TFTs, gate bus lines, source bus lines, and patch electrodes (); a slot substrate () including: a second dielectric substrate (), and a slot electrode (); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (). The slot electrode includes slots () arranged in correspondence with the plurality of patch electrodes, and a thickness of the second dielectric substrate () is smaller than the thickness of the first dielectric substrate () at least in a region where the antenna units (U) are arranged.

Scanning antenna

A scanning antenna includes a TFT substrate including a first dielectric substrate, a plurality of TFTs, a plurality of gate bus lines, a plurality of source bus lines, and a plurality of patch electrodes, a slot substrate including a second dielectric substrate and a slot electrode () formed on the first main surface of the second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate provided opposing a second main surface opposite to the first main surface of the second dielectric substrate via a dielectric layer, and the slot electrode includes a plurality of slots arranged in accordance with the plurality of patch electrodes, and a groove configured to divide the slot electrode into two or more sections, and the TFT substrate includes an opposing metal part arranged opposing the groove, and when viewed from a normal line direction of the first dielectric substrate, the groove is covered with the opposing metal part in the width direction thereof.

Scanning antenna and method for manufacturing same

A scanning antenna including: a TFT substrate including a first dielectric substrate, a TFT, a gate bus line, a source bus line, and a patch electrode; a slot substrate including a second dielectric substrate and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer provided between the TFT substrate and the slot substrate; and a reflective conductive plate. The scanning antenna has a tiling structure in which a plurality of scanning antenna portions are bonded together, and each of the plurality of scanning antenna portions includes a TFT substrate portion and a slot substrate portion. The plurality of scanning portions include: a scanning antenna portion including, on a side to be bonded with an adjacent scanning antenna portion, a side which the TFT substrate portion protrudes beyond the slot substrate portion, and a scanning antenna portion including, on a side to be bonded with an adjacent scanning antenna portion, a side in which the slot substrate portion protrudes beyond the TFT substrate portion.

A scanning antenna is a scanning antenna in which antenna units U are arranged, and includes a TFT substrate including a first dielectric substrate, TFTs, a plurality of gate bus lines, source bus lines, and patch electrodes; a slot substrate including a second dielectric substrate, and a slot electrode formed on a first main surface of the second dielectric substrate; a liquid crystal layer LC provided between the TFT substrate and the slot substrate; and a reflective conductive plate provided opposing a second main surface of the second dielectric substrate opposite to the first main surface via a dielectric layer. The slot electrode includes slots arranged in correspondence with the plurality of patch electrodes, and each of the patch electrodes is connected to a drain of a corresponding TFT and is supplied with a data signal from a corresponding source bus line while selected by a scanning signal supplied from the gate bus line of the corresponding TFT. The frequency at which the polarity of the voltage applied to each of the plurality of patch electrodes is inverted is greater than or equal to 300 Hz.

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Sakai, Japan

Makoto Nakazawa