Nissan Chemical Industries Limited

Nissan Chemical Corporation

Samsung Electronics Co., Ltd.

Advanced Technology Materials, Inc.

Makoto Nakajima

Wataru Shibayama

Yuta Kanno

Satoshi Takeda

Shuhei Shigaki

Hiroyuki Wakayama

Kenji Takase

Rikimaru Sakamoto

Keisuke Hashimoto

Hiroaki Yaguchi

Hiroto Ogata

Hikaru Tokunaga

Satoshi Takei

Ken Ishibashi

Hayato Hattori

Takahiro Kishioka

Yasushi Sakaida

Daisuke Sakuma

Hirokazu Nishimaki

Yuichi Goto

Masahisa Endo

Yuki Endo

Hikaru Imamura

Kodai Kato

Hyunwoo Kim

Takafumi Endo

Tomoyuki Enomoto

David Daniel Bernhard

Mamoru Tamura

Masayuki Haraguchi

Motonobu Matsuyama

Ju-Young Kim

Yusuke Horiguchi

Tomoko Misaki

Shun Kubodera

Tomotada Hirohara

Yuki Mitsutake

Tomoe Miyazawa

Yoichiro Fujita

Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.X—Si(R1)(R2)  [Formula 1]Y—Si(R3)  [Formula 7]

Substrate treating composition and method for fabricating a semiconductor device using the same

A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

Film-forming composition

A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

Resist underlayer film-forming composition using carbon-oxygen double bond

A composition with which collapse and roughness of a resist pattern can be ameliorated and the etching resistance can be improved by metallizing a resist in the resist pattern and a resist pattern metallization method using the composition. A composition for a resist pattern metallization process, including a component (A): at least one selected from the group consisting of a metal oxide (a1), a hydrolyzable silane compound (a2), a hydrolysate (a3) of the hydrolyzable silane compound, and a hydrolysis condensate (a4) of the hydrolyzable silane compound, a component (B): an acid compound containing no carboxylic acid group (—COOH), and a component (C): an aqueous solvent, and a resist pattern metallization method for providing a resist pattern in which the composition components have permeated into a resist using the composition.

Composition for resist pattern metallization process

A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCHCH(OH)CHO— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.]

Resist underlayer film-forming composition

A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(═O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(═O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is −0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKais −0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.

A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R, R, Rand Rindependently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that Ris present only in cases where X is a nitrogen atom, and Ris present only in cases where Y is a nitrogen atom.)

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):RRSi(R)  Formula (1)wherein Ris an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; Ris an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; Rand Rare optionally bonded together to form a ring structure; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

Silicon-containing resist underlayer film-forming composition including organic group having ammonium group

A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate. For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1):RSi(R)  Formula (1)and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.

Coating composition for pattern inversion

A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Resist underlayer film-forming composition including cyclic carbonyl compound

A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent: (in Formulae (1) and (2), Ris a functional group of Formula (3); in Formula (3), Qand Qare each independently a hydrogen atom or a Calkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), Xis a Corganic group, and i and j are each independently 0 or 1).

A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1):RRSi(R)  Formula (1)(wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group

An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0≤(organic group)/(Si)≤0.29 on average. Method for producing semiconductor device, including steps: forming resist film on a semiconductor substrate; exposing resist film and developing resist after exposure to obtain resist pattern; applying the coating composition onto patterned resist film to embed the polysiloxane; curing the embedded polysiloxane and then etching resist film to reverse the pattern; and processing substrate using polysiloxane film.

Acetal-protected silanol group-containing polysiloxane composition

Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): RRSi(R)(where Ris organic group of Formula (2): and is bonded to silicon atom through a Si&#x2014;C bond; Ris an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

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Toyama, Japan

Makoto Nakajima