Tokyo Electron Limited

Makoto Muramatsu

Tadatoshi Tomita

Takahiro Kitano

Hisashi Genjima

Gen You

Keiji Tanouchi

Kazuhiro Takeshita

Shinji Nagashima

Yoji Mizutani

Takanori Nishi

Kyoshige Katayama

Kazutoshi Yano

Hiroyuki Fujii

Mark H Somervell

Benjamen M Rathsack

Yusuke Saito

Mitsuaki Iwashita

Hidetami Yaegashi

Keiichi Tanaka

Kazuyuki Mitsuoka

Teruhiko Kodama

Shinichiro Kawakami

Kenichi Oyama

Kosuke Yoshihara

Shouichi Terada

Takashi Yamauchi

Yoshihiro Kondo

Ryan Burns

Norihiko Sasagawa

Takeshi Hirao

Hitoshi Hashima

Soichiro Okada

A substrate treatment method for treating a substrate, includes: applying a coating solution containing an organometallic complex, a solvent, and an additive to the substrate to form a solution film of the coating solution; heating the substrate on which the solution film of the coating solution has been formed, to form an organic constituent-containing metal oxide film being a metal oxide film containing an organic constituent contained in the additive; performing dry etching using the organic constituent-containing metal oxide film as a mask; removing the organic constituent in the organic constituent-containing metal oxide film after the dry etching; and removing, by wet etching, a film obtained by removing the organic constituent from the organic constituent-containing metal oxide film.

Substrate treatment method and substrate treatment system

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350&#xb0; C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

Method for forming insulating film, apparatus for processing substrate, and system for processing substrate

A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

Substrate processing method, substrate processing apparatus, and storage medium

A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

Insulating film forming method, insulating film forming device, and substrate processing system

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

Computer storage medium to perform a substrate treatment method using a block copolymer containing a hydrophilic and hydrophobic copolymers

Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself is not intended to limit the scope of this patent. The scope of the present invention is pointed out in the appending claims.

Facilitation of spin-coat planarization over feature topography during substrate fabrication

A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.

Substrate processing method and computer storage medium

Substrate treatment method using a block copolymer containing a hydrophilic and a hydrophobic polymers

A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

Substrate treatment method, computer storage medium and substrate treatment system

The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

Pattern forming method and heating apparatus

A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.

Substrate treatment method, computer storage medium, and substrate treatment system

A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

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Koshi, Japan

Makoto Muramatsu