Sony Corporation

Sony Group Corporation

Makoto Motoyoshi

Shin Iwabuchi

Ikuo Yoshihara

Minoru Ikarashi

Minoru Sugawara

Katsumi Okayama

Kojiro Yagami

Kaoru Kobayashi

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Semiconductor image sensor module and method of manufacturing the same

The present invention provides a CMOS type semiconductor image sensor module in which the aperture ratio of the pixel is improved and at the same time chip use efficiency is attempted to be improved and furthermore, simultaneous shuttering of all the pixels is made possible, and a method of manufacturing the same. The semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip including an image sensor in which a plurality of pixels, each constituted by a photoelectric conversion element and transistors, are arranged, and a second semiconductor chip including an A/D converter array. Preferably, a third semiconductor chip including a memory element array is further laminated. Also, a semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip provided with the aforesaid image sensor and a fourth semiconductor chip provided with an analog type nonvolatile memory array.

A high-capacity magnetic memory device in which the magnetic field for writing is nearly uniform for all memory elements. It is realized by reducing the deformation of resist pattern which occurs in photolithography when mask patterns are close to each other. The magnetic memory device is an MRAM composed of a large number of memory cells, each including one TMR element, one transistor for reading (selection), and reading plugs that connect the TMR element to the transistor for reading (selection). These memory cells are arranged such that the TMR elements are in a pattern of translational symmetry. For writing, memory cells are connected by the bit lines and the writing word lines which intersect orthogonally. The long axis of the TMR element is oriented aslant 45&#xb0; with respect to these lines, so that the TMR elements are capable of toggle-mode writing.

Solid-state memory device and method for arrangement of solid-state memory cells

A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device () is composed of the TMR element (), the writing word line (the first wiring) () which is electrically insulated from the TMR element (), and the bit line (the second wiring) () which is electrically connected to the TMR element () and intersecting three-dimensionally with the writing word line (), with the TMR element () interposed therebetween. The magnetic memory device () is characterized as follows. The magnetic flux concentrator () of high-permeability layer is formed along at least the lateral sides of the writing word line () and the side of the writing word line () which is opposite to the side facing the TMR element (). At least either of the side walls of the magnetic flux concentrator () projects from the writing word line () toward the TMR element ().

Magnetic memory device and producing method thereof

A non-volatile magnetic memory device is proposed, which provides sufficient magnetic shielding performance for external magnetic fields. A first magnetic shield layerand a second magnetic shield layer, both made of a soft magnetic metal, are formed respectively on the bottom surface of the transistor section, which is the mounting side of the MRAM device, and on the top surface of the bit line, which is opposite to the bottom surface of the mounting side of the MRAM device. On the second magnetic shield layer, a passivation filmis formed. The magnetic flux penetrated from the external magnetic field, is suppressed below the inversion strength of the MRAM device, thereby improving reliability. Moreover, by using soft magnetic metal as the magnetic shield layers, the magnetic shield layers can be formed by the sputtering technique, particularly composing elements can be partly shared as elements of the targets to be used for forming various layers composing the MRAM deviceby the sputtering technique, thereby enabling to form various layers of the MRAM devicein a single sputtering chamber efficiently.

Magnetic non-volatile memory device

A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.

Magnetic memory device and method for production thereof

A semiconductor integrated circuit device has a plurality of circuit elements, a plurality of connection elements each of which becomes a conductive state or a nonconductive state, interconnects for supplying control signals for placing the connection elements in the conductive state or the nonconductive state, and a plurality of circuit selection switching elements, wherein said circuit selection switching elements are driven in response to the circuit configuration instruction signal, control signals are output from the circuit selection switching elements. As the connection elements, preferably use is made of magnetoresistance effect elements or resistance control elements which become the conductive state or the nonconductive state in accordance with application of a magnetic field. As the circuit elements, use can be made of magnetoresistance effect elements or resistance control elements.

Semiconductor-integrated circuit utilizing magnetoresistive effect elements

An TMR-type MRAM comprising a transistor for selection; a first connecting hole; a first wiring (write-in word line); a second insulating interlayer covering a first insulating interlayer and the first wiring; a TRM device formed on the second insulating interlayer; a second wiring (bit line) formed on a third insulating interlayer; and a second connecting hole formed through the second insulating interlayer and connected to the first connecting hole, in which an end face of an extending portion of the other end of the TRM device is in contact with the second connecting hole.

Nonvolatile magnetic memory device and manufacturing method thereof

A semiconductor integrated circuit device has a plurality of circuit elements, a plurality of connection elements each of which becomes a conductive state or a nonconductive state, interconnects for supplying control signals for placing the connection elements in the conductive state or the nonconductive state, and a plurality of circuit selection switching elements, wherein said circuit selection switching elements are driven in response to the circuit configuration instruction signal, and control signals are output from the circuit selection switching elements. The connection elements may be magnetoresistance effect elements or resistance control elements which become the conductive state or the nonconductive state in accordance with application of a magnetic field. The circuit elements may also be magnetoresistance effect elements or resistance control elements.

A method of preparing a ring-formed body comprises the steps of: forming, on a substrate, a column in a columnar form which serves as a core of a ring-formed body; depositing, on both the substrate and the column, a ring-formed body forming film for forming the ring-formed body so that the ring-formed body forming film formed on the substrate and that formed on the column are separated from each other; forming a mask film for covering the ring-formed body forming film; and subjecting the mask film and ring-formed body forming film to anisotropic dry etching so that the films remain on a sidewall of the column, forming a ring-formed body comprised of the ring-formed body forming film having the mask film.

Growing community of inventors

Kanagawa, Japan

Makoto Motoyoshi