Hitachi, Ltd.

Other

Nippon Telegraph and Telephone Public Corporation

Hitachi Haramachi Semi-Conductor, Ltd.

Makoto Matsui

Eiichi Maruyama

Ryuichi Saito

Yoshiro Mikami

Makoto Tsumura

Yoshiharu Nagae

Hideaki Yamamoto

Toshihisa Tsukada

Masaaki Kitajima

Katsuyuki Funahata

Yoko Wakui

Fumiaki Nemoto

Tadaaki Hirai

Yasuhiro Shiraki

Masayuki Suzuki

Nobuyoshi Kobayashi

Hideaki Kawakami

Seiichi Kondo

Yoshizumi Eto

Tetsuya Goto

Junichi Ohwada

Haruo Matsumaru

Kiichiro Mukai

Yoshifumi Katayama

Jun-ichi Ohwada

Yoshihiro Arakawa

Masakatsu Nakano

An alumina- or magnesia-reducing process in which a greenhouse gas or substance harmful to the human body is not emitted, which can achieve improved energy efficiency in comparison with the Hall-Heroult or Pidgeon methods. The process includes: introducing an alumina or magnesia powder with a carrier gas to the upstream side of a throat provided on a reducing unit; pressure-transferring the powder and carrier gas to the throat by an operative gas introduced to the upstream side of the throat; irradiating the throat with a laser beam to convert the alumina or magnesia into a plasma state and dissociate the alumina or magnesia thermally; jetting the thermally dissociated product through a nozzle provided on the downstream side of the throat at a supersonic speed to form a frozen flow; and isolating aluminum or magnesium. Hydrogen may be added to the operative gas to accelerate the reduction of alumina or magnesia.

Method for reducing alumina or magnesia by utilizing supersonic gas flow

A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film,is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film,formed thereon. The second substrate is opposed to the first substrate. The light-screening film,extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

Liquid crystal display device and driving method therefor

A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

A superconducting material made of tungsten or molybdenum containing a specified amount of silicon, a wiring made of this superconducting material, and a semiconductor device using this wiring. The above-mentioned superconducting material undegoes no damage even in the steps of heat treatments effected after the formation of a wiring therefrom by virtue of its high melting point, and can be very easily patterned by reactive ion etching using SF.sub.6 as an etching gas, which has heretofore been generally employed. These features, in which conventional superconducting materials are lacking, allow the superconducting material of the present invention to exhibit excellent properties particularly when used in the wirings of a semiconductor device.

Superconducting alloys comprising tungsten, molybdenum, silicon and

In a display device having, at least, picture elements which are arrayed on a transparent insulating substrate, and transistor portions which are formed of a semiconductor layer formed on the transparent insulating substrate; a display device characterized in that, at least, interconnection parts of the transistor portions extend above the semiconductor layer formed on the transparent insulating substrate. The disconnection of the interconnection parts can be avoided.

Display device

An imaging display device characterized by comprising a pair of transparent substrates which are arranged in opposition to each other with a predetermined interval therebetween, photoelectric elements which are disposed in a large number between the substrates and in adjacency to one of the substrates and which convert light signals from outside the one substrate into electric signals, and a large number of electrooptic elements which are disposed between the other substrate and the respective photoelectric elements and in a predetermined relationship of correspondence with the photoelectric elements and which generate light signals by utilizing parts of the electric signals of the corresponding photoelectric elements.

Imaging display device

A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.

Semiconductor device and method of manufacturing the same

In a thin-film photosensor comprising a transparent electrode deposited on one surface of a thin layer of photoconductor, and a counter electrode deposited on the other surface thereof, a photosensor for use in a photosensor array of a facsimile transmitter or the like characterized in that part of the transparent electrode other than a window for incidence of a light signal is covered with an opaque thin film.

Photosensor

A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.

Photo-sensor

A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.

Growing community of inventors

Kunitachi, Japan

Makoto Matsui