Yoshida Kogyo K.k.

Mitsubishi Chemical Industries Limited

Makoto Konagai

Kiyoshi Takahashi

Akira Yamada

Toshihiko Yoshitomi

Shinichiro Yoshida

Masahiro Yoshino

Akira Omura

Takeshi Omori

The formation of a transparent conductive ZnO film on a substrate in accordance with the chemical vapor deposition process is accomplished herein by a method characterized by feeding purified water and an organic metal material for Zn as separately entrained by a carrier gas into a vacuum chamber having a reduced inner pressure, adjusting the gas pressure inside the vacuum chamber to a level in the range of from 1 to 30 Torrs, supplying diborane gas or a compound containing boron or aluminum into the vacuum chamber, heating a substrate disposed inside the chamber to a prescribed temperature, and performing the ensuant formation of a film under the adjusted gas pressure mentioned above. Preferably, the formation of the film on the substrate disposed inside the vacuum chamber is carried out while the substrate is kept irradiated with ultraviolet light. This method enables the transparent conductive ZnO film possessing a textured surface form, exhibiting low resistivity, and particularly befitting adoption as a transparent conductive film in a thin-film solar cell to be produced at a relatively high film-forming rate.

Method for producing a transparent conductive ZnO film by incorporating

A substrate for an amorphous silicon semiconductor material characterized in that a metal or alloy film is formed on the surface of a metal substrate by means of an electroplating treatment.

Substrate for amorphous silicon semiconductor material

Growing community of inventors

Tokyo, Japan

Makoto Konagai