Sumitomo Electric Industries, Limited

Toyota School Foundation

Sumitomo Electric Device Innovations, Inc.

Makoto Kiyama

Takashi Sakurada

Yu Saitoh

Masaya Okada

Seiji Nakahata

Tomihito Miyazaki

Yoshiyuki Yamamoto

Masahiro Adachi

Seiji Yaegashi

Takao Nakamura

Youichi Nagai

Koji Uematsu

Taku Horii

Kazutaka Inoue

Kouhei Miura

Mitsunori Yokoyama

Katsushi Akita

Ryu Hirota

Tatsuya Tanabe

Masaki Ueno

Hiromu Shiomi

Akihiro Hachigo

Takashi Matsuura

Koji Katayama

Tsunehiro Takeuchi

Shin Hashimoto

Susumu Yoshimoto

Ayako Ikeda

Hideaki Nakahata

Shinsuke Fujiwara

Kazuhide Sumiyoshi

Ryo Toyoshima

Masashi Yamashita

Naoki Matsumoto

Takashi Kyono

Yusuke Yoshizumi

Keiji Ishibashi

Takuji Okahisa

Ken Nakata

Fumitake Nakanishi

Fumitaka Sato

Katsushi Hashio

Yoshihiro Saito

Kotaro Hirose

Mitsuru Shimazu

Kuniaki Ishihara

Mitsutaka Tsubokura

Yukio Ishikawa

Takahisa Yoshida

Shinya Kawamoto

Do-Gyun Byeon

Shunsuke Nishino

Yojiro Nakayama

Yutaka Hoshina

A gallium arsenide single crystal substrate includes a main surface having a circular shape and has a first integrated intensity ratio or a second integrated intensity ratio. The first integrated intensity ratio and the second integrated intensity ratio are obtained from a spectrum, based on a predetermined X-ray photoelectron spectroscopy, of each of arsenic and gallium. The number of particles each having a major axis of 0.16 μm or more is 2 or less per cmof the main surface.

Gallium arsenide single crystal substrate and method of manufacturing same

A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution Δd/d of 0.0055 or more.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor

A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and optical sensor

A thermoelectric material element includes: a thermoelectric material portion composed of a thermoelectric material that includes a first crystal phase and a second crystal phase during an operation, the second crystal phase being different from the first crystal phase; a first electrode disposed in contact with the thermoelectric material portion; and a second electrode disposed in contact with the thermoelectric material portion and disposed to be separated from the first electrode. During the operation, the thermoelectric material portion includes a first temperature region having a first temperature, and a second temperature region having a second temperature lower than the first temperature of the first temperature region. A ratio of the first crystal phase to the second crystal phase in the first temperature region is larger than a ratio of the first crystal phase to the second crystal phase in the second temperature region.

Thermoelectric material element, power generation device, optical sensor, and method for manufacturing thermoelectric material

A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.

Thermoelectric conversion material, thermoelectric conversion element and thermoelectric conversion module

A plate-shaped thermoelectric conversion material having a first main surface and a second main surface on the opposite side of the first main surface is formed of semiconductor grains that are in contact with one another. The semiconductor grains each include a particle composed of a semiconductor containing an amorphous phase, and an oxidized layer covering the particle. The distance between the first main surface and the second main surface exceeds 0.5 mm.

Thermoelectric conversion material, thermoelectric conversion element and production method of thermoelectric conversion material

A thermoelectric conversion material contains a matrix composed of a semiconductor and nanoparticles disposed in the matrix, and the nanoparticles have a lattice constant distribution &#x394;d/d of 0.0055 or more.

A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5&#xd7;10&#x3a9;&#xb7;cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.

Semi-insulating gallium arsenide crystal substrate

A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cmand not more than 2 cmbetween maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an Ephonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cmbetween maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the Ephonon mode at all of measurement points in the five locations.

Gallium nitride substrate

There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25&#xb0; C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a&#x3e;Ibe2a . . . (I) and 2.1&#x2264;Ibe1a/Ibe2a&#x2264;9.4 . . . (II).

There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25&#xb0; C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II):12&#x2003;&#x2003;(I)and2.1&#x2264;12&#x2264;9.4&#x2003;&#x2003;(II).

A diode having excellent switching characteristics is provided. A diode includes a silicon carbide substrate, a stop layer, a drift layer, a guard ring, a Schottky electrode, an ohmic electrode, and a surface protecting film. At a measurement temperature of 25&#xb0; C., a product R&#x2022;Q of a forward ON resistance R of the diode and response charges Q of the diode satisfies relation of R&#x2022;Q&#x2266;0.24&#xd7;V. The ON resistance R is found from forward current-voltage characteristics of the diode. A reverse blocking voltage Vis defined as a reverse voltage which produces breakdown of the diode. The response charges Q are found by integrating a capacitance (C) obtained in reverse capacitance-voltage characteristics of the diode in a range from 0 V to V.

Diode

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness tof 0.1 mm or more and 1 mm or less and a group III nitride film having a thickness t, thinner than the thickness t, of 0.01 mm or more and 0.25 mm or less that are bonded to each other. An absolute value |&#x394;&#x3b1;| of a difference &#x394;&#x3b1; in thermal expansion coefficient determined by subtracting a thermal expansion coefficient &#x3b1;of the support substrate from a thermal expansion coefficient &#x3b1;of the group III nitride film is 2.2&#xd7;10Kor less. A Young's modulus Eand the thickness tof the support substrate, a Young's modulus Eand the thickness tof the group III nitride film, and the difference &#x394;&#x3b1; in thermal expansion coefficient satisfy a relation: t/t&#x2267;6E&#xb7;|&#x394;&#x3b1;|/E.

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an openingthat extends from an n-type contact layerand reaches an n-type drift layerthrough a p-type barrier layeris formed. The semiconductor device includes a regrown layerlocated so as to cover portions of the p-type barrier layerand the like that are exposed to the opening, the regrown layerincluding an undoped GaN channel layerand a carrier supply layer; an insulating layerlocated so as to cover the regrown layer; and a gate electrode G located on the insulating layer. In the p-type barrier layer, the Mg concentration A (cm)and the hydrogen concentration B (cm) satisfy 0.1&#x3c;B/A&#x3c;0.9 . . . (1).

Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same

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Itami, Japan

Makoto Kiyama