Sharp Kabushiki Kaisha Corporation

Makoto Kita

Yasuyoshi Kaise

Mutsumi Nakajima

Yoshimizu Moriya

Hiroshi Matsukizono

Yoshiyuki Itoh

The active-matrix substrate () of the present invention satisfies d&#x3e;dand d+A/2&#x3e;d+L/2, where dis the length of the shortest line segment that connects together a channel region () and a gettering region () as measured by projecting the line segment onto a line that connects together the channel region () of a TFT () and a source contact portion, dis the distance from the channel region () to the source contact portion (), dis the distance from the channel region () to a first end portion (), Lis the length of the first end portion (), and Ais the length of the source contact portion ().

Active matrix substrate

Exposure is performed by controlling an exposure amount applied to a photosensitive resinarranged on a metal film, and development is performed to the photosensitive resin, and thus a resistprovided with an edge sectionhaving a tilted surfacehaving a tilt angle &#x3b1; of at least 20&#xb0; but no more than 60&#xb0; is formed. Then, a metal wiring is formed by etching the metal filmby using the resistas a mask.

Method for manufacturing display device

In an active-matrix substrate () according to the present invention, a semiconductor layer () has a first gettering region () adjacent to the source region () of a first thin-film transistor (), a second gettering region () adjacent to the drain region () of a second thin-film transistor (), and a third gettering region () adjacent to any of the source and drain regions located between the respective channel regions (and) of the first and second thin-film transistors (and) among the source and drain regions of the thin-film transistors included in the thin-film transistor element ().

A display device includes a first substrate and a second substrate opposed to each other and a rectangular frame-shaped sealing material configured to bond the first and second substrates together. The first substrate has an interconnect layer overlapping a corner of the sealing material, a layered insulating film including an inorganic insulating film and an organic insulating film placed one upon the other on the interconnect layer, and a transparent conductive layer formed on the layered insulating film to be connected to the interconnect layer via a contact hole formed through the layered insulating film. The second substrate has an electrode layer electrically connected to the transparent conductive layer. The inorganic insulating film has an exposed portion exposed from the organic insulating film in the corner of the sealing material. The exposed portion is entirely exposed from the transparent conductive layer. In the exposed portion, a through hole is formed through the interconnect layer, and the inorganic insulating film covers the through hole.

Growing community of inventors

Osaka, Japan

Makoto Kita