Chisso Corporation

Fuji Photo Film Company, Limited

Fujifilm Corporation

Sharp Kabushiki Kaisha Corporation

Ulvac, Inc.

Makoto Kikuchi

Kanetsugu Terashima

Mitsuyoshi Ichihashi

Fusayuki Takeshita

Kenji Furukawa

Katsuyuki Murashiro

Hisashi Okamura

Hiroshi Kawamoto

Atsushi Tanaka

Morio Yagihara

Masayuki Suzuki

Shinichi Saito

Masashi Ono

Yoichi Maruyama

Tadanobu Sato

Yoshihiko Kanemitsu

Makoto Shiomi

Mitsuhiro Koden

Masahiro Asami

Eiji Okabe

Genichi Furusawa

Masaaki Miki

Mayumi Tanabe

Takashi Kaneko

Hitoshi Takeda

Masatoshi Fukushima

Motonari Matsuki

Yoshio Ishii

Kiyoshi Morimoto

Toshio Kawagishi

Tadashi Inaba

Mikio Ihama

Shunji Takada

Kazutaka Takahashi

Yoichi Hosoya

Naoyuki Hanaki

Yuzo Toda

Masahiko Taniguchi

Masahiro Takata

Yoichi Suga

Atsushi Matsunaga

Takefumi Hara

Takahiro Matsuno

Takamitsu Tomiga

Kazuki Uehara

Kazuya Saito

Masashi Kubo

Toru Yamada

Miwa Watai

Naohiro Takeda

Takuji Kosugi

Miho Shimizu

Tetsuo Okutsu

Masaharu Seki

Kenjii Furukawa

Kenji Furakawa

A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum dots, and the semiconductor quantum dots have an average shortest inter-dot distance of less than 0.45 nm. A solar cell, a light-emitting diode, a thin film transistor, and an electronic device include the semiconductor film.

Semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and a ligand that is coordinated to the semiconductor quantum dots and that is represented by the following Formula (A): wherein, in Formula (A), Xrepresents NH, S, or O; each of Xand Xindependently represents NH, SH, or OH; and each of n and m independently represents an integer from 1 to 3.

Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), Xrepresents &#x2014;SH, &#x2014;NH, or &#x2014;OH; and each of Aand Bindependently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when Aand Bare both hydrogen atoms, Xrepresents &#x2014;SH or &#x2014;OH; in Formula (B), Xrepresents &#x2014;SH, &#x2014;NH, or &#x2014;OH; and each of Aand Bindependently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), Arepresents a hydrogen atom or a substituent having from 1 to 10 atoms.

A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression.0.9&#x3c;&#x2003;&#x2003;(1)(D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)

Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

The method for synthesizing indium phosphide nanoparticles using indium trichloride as an indium raw material and tris(dimethylamino)phosphine as a phosphorus raw material, includes a preparation step of mixing the indium raw material, the phosphorus raw material, an organic solvent having a boiling point of 170&#xb0; C. or higher, and a particle surface ligand to obtain a mixture solution and a synthesis step of synthesizing the indium phosphide nanoparticles by heating the mixture solution to 150&#xb0; C. or higher but lower than 170&#xb0; C. In the method, the particle surface ligand is an aliphatic amine having a carbon number of 18 or more, and the indium trichloride is an anhydride.

Method for synthesizing indium phosphide nanoparticles

The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portionfor mounting a film-forming object, a high frequency power source, and a shower platewhich is provided to face the film-forming object S mounted on the mounting portion, which introduces a film-forming gas, and to which the high frequency power source is connected and a high frequency voltage is applied. A low frequency power sourcefor applying a low frequency voltage is connected to the shower plate or the mounting portion mounting a substrate. The film-forming method is performed using the film-forming device, and the film-forming method is carried out in forming a passivation film.

Film-forming method for forming passivation film and manufacturing method for solar cell element

A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), Rrepresents an alkyl group having 1 to 4 carbon atoms and Rrepresents an alkylene group having 1 to 4 carbon atoms.

Metal-polishing liquid and polishing method

A silver halide color photosensitive material, wherein the total coating amount of silver of the photosensitive silver halide is 6.0 g/mor less in terms of metal silver, and the photosensitivity is the ISO speed of 400 or more, the silver halide color photosensitive material further comprising at least one compound selected from a group consisting of the following type 1 and type 2:

Silver halide color photosensitive material

A silver halide photographic emulsion comprising epitaxial junction type tabular grains. The epitaxial junction type tabular grains each satisfying the following requirements (i) to (iv) occupy 100 to 50% (grain numerical ratio) of all the grains contained in the silver halide photographic emulsion:

Silver halide photographic emulsion

A silver halide photographic emulsion comprising grains, wherein 50% or more (numerical ratio) of all the grains are occupied by tabular grains with epitaxial junction meeting the requirements (i) to (v): (i) silver iodochlorobromide grains having (111) faces as main planes and having two parallel twin planes, (ii) an equivalent circle diameter of 3.0 &#x3bc;m or more and an aspect ratio of 8 or more, (iii) each of host tabular grains has six silver halide epitaxial junction portions selectively in apex portions thereof, (iv) at least one of the silver halide epitaxial junction portions has at least one dislocation line, and (v) a spacing between the two parallel twin planes of 0.012 &#x3bc;m or less.

Silver halide photographic emulsion and silver halide photographic lightsensitive material using the same

A silver halide photographic emulsion comprising silver halide grains is disclosed, which is obtained through a process including at least one step of forming grains using a dispersion medium having a low viscosity, wherein 50% or more of the entire projected area of all silver halide grains in the emulsion is occupied by silver halide tabular grains having an aspect ratio of 4 or more and a twin plane spacing of 0.012 &mgr;m or less. Further disclosed is a silver halide color photographic light-sensitive material using the emulsion.

Silver halide photographic emulsion and light-sensitive material containing the same

There is disclosed a silver halide photographic emulsion comprising silver halide grains, wherein 50% or more of the projected area of the silver halide grains to be contained is occupied by tabular grains having an aspect ratio of 2 or more and a grain thickness of 0.2 &mgr;m or less, with the tabular grains each having a phase with the content of silver bromide being 10% or more, and wherein in the phase, the tabular grains each contain a metal complex dopant in an amount necessary to increase the density of a dislocation. This emulsion produces high contrast and better granularity while it has high sensitivity. Further, there is also disclosed a silver halide photographic emulsion, wherein the average equivalent-circle diameter of the total tabular grains among the silver halide grains contained is 2.0 to 4.0 &mgr;m, and the tabular grains contain at least one metal complex having, as a ligand, a heterocyclic compound in a number more than half of the coordination number of the metal atom. This emulsion has high sensitivity and excellent photographic characteristics exhibiting little change of gradation upon exposure to high-intensity illumination. In addition, the present invention provides a silver halide color photographic light-sensitive material using the emulsion, and a color image forming process that is simple and rapid and places little load on the environment, using the material.

Silver halide photographic emulsion and light-sensitive material containing the same, and image-forming method using the light-sensitive material

Silver halide photographic emulsion and silver halide photographic light-sensitive material containing the same

A method of processing a silver halide color photographic lightsensitive material. The material comprises a support and at least one lightsensitive silver halide emulsion layer containing a binder and lightsensitive silver halide grains comprising tabular grains on the support. The material further comprises a developing agent or its precursor, and a compound capable of forming a dye by a coupling reaction with the developing agent in an oxidized form. The method comprises (a) exposing the material under natural light of 2000-9000 K color temperature or artificial light corresponding thereto, for 1/10-1/1000 sec, in an exposure amount such that 80-90% (numerical ratio) of the grains contained in the lightsensitive layer have at least one development initiating point per grain, and (b) color developing the exposed material so that the tabular grains have 3.0 or more (average) development initiating points per grain at the completion of the development.

Method of processing silver halide color photographic lightsensitive material

Growing community of inventors

Minami-ashigara, Japan

Makoto Kikuchi