Tokyo Electron Limited

Makoto Kato

Akira Koshiishi

Koji Maruyama

Shin Yamaguchi

Masato Horiguchi

Toshio Haga

Hideto Saito

Ryoma Muto

Sho Murano

Takashi Kanazawa

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a lower electrode disposed in the substrate support; a conductive member disposed above the substrate support, the conductive member having at least one coolant inlet and at least one coolant outlet, the conductive member being connected to an RF potential or a DC potential; and an upper electrode assembly including: a conductive plate detachably connected to a bottom surface of the conductive member, the conductive plate having one or more coolant channels communicating with the at least one coolant inlet and the at least one coolant outlet; an electrode plate disposed below the conductive plate; and a conductive bonding sheet disposed between the electrode plate and the conductive plate.

Plasma processing apparatus, method for manufacturing upper electrode assembly, and method for reproducing upper electrode assembly

A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

Substrate support and substrate processing apparatus

A temperature regulator includes a first member, a channel, and a cavity. The first member has a first surface that is subjected to temperature control. The channel is along the first surface in the first member, and refrigerant flows in the channel. The cavity is provided in the first member adjacently to a flow rate change region of the channel. A flow rate of refrigerant in the flow rate change region is higher than a flow rate of refrigerant in another region of the channel.

Temperature regulator and substrate treatment apparatus

In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. The adsorption step and the etching step are alternately repeated. In the adsorption step, a density of radicals is 200 or greater times a density of ions. In the etching step, RF energy having a power density of 0.07 W/cmor less is supplied to the lower electrode or a high-frequency bias having a power density of 0.14 W/cmor less is supplied to the lower electrode for a period of 0.5 seconds or less.

Growing community of inventors

Miyagi, Japan

Makoto Kato