Mitsui Chemicals, Inc.

Mitsui Chemicals Tohcello, Inc.

Makoto Kataoka

Hideki Fukumoto

Yoshihisa Saimoto

Yasuhisa Fujii

Takanobu Koshimizu

Masafumi Miyakawa

Kentaro Hirai

Shinichi Hayakawa

Eiji Hayashishita

Akimitsu Morimoto

Mitsuru Sakai

Katsutoshi Ozaki

Kouji Igarashi

Jun Nakashima

Masatoshi Kumagai

According to the present invention, there is provided a semiconductor wafer protective film including a substrate layer (A) and an adhesive layer (C) formed on the substrate layer (A), in which the substrate layer (A) includes polymer, and a solubility parameter of the polymer determined by a Van Krevelen method is equal to or greater than 9.

Semiconductor wafer protective film and method of manufacturing semiconductor device

To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25&#xb0; C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition E(60)/E(25)&#x3c;0.1, where E(25) is a tensile elasticity at 25&#xb0; C. and E(60) is a tensile elasticity at 60&#xb0; C., the E(60) ranging from 0.005 MPa to 1 MPa; and a resin layer B having a tensile elasticity at 60&#xb0; C., E(60), of 1 MPa or more and having a thickness of 0.1 &#x3bc;m to less than 100 &#x3bc;m, the E(60) being larger than the E(60) of the resin layer A.

Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet

A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 &#x3bc;m or less.

Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer

The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1&#xd7;10Pa to 1&#xd7;10Pa at 150&#xb0; C. and a thickness of from 3 &#x3bc;m to 100 &#x3bc;m is formed on both a surface and back surface of a base film having a melting point of at least 200&#xb0; C. and a thickness of 10 &#x3bc;m to 200 &#x3bc;m. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 &#x3bc;m.

Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film

A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from &#x2212;50&#xb0; C. to 5&#xb0; C. at which tan &#x3b4; of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5&#xb0; C. to 50&#xb0; C. at which tan &#x3b4; of a dynamic viscoelasticity is maximized, and from 0.1 weight part to 10 weight parts of a cross-linking agent (C) having more than 2 cross-linking reactive functional groups in a molecule based on 100 weight parts of total amount of the polymers (A) and (B), and the surface protecting adhesive film for a semiconductor wafer which the thickness of the adhesive layer is from 5 &#x3bc;m to 50 &#x3bc;m has an excellent adhesion, prevention of breakage and contamination resistance.

Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film

An adhesive film for protecting the surface of a semiconductor wafer wherein the adhesive layer is formed on one surface of a substrate film, the substrate film comprising at least one layer which satisfies the following requisites (A) and at least one of (B) or (C):

Surface protecting adhesive film for semiconductor wafer and processing method for semiconductor wafer using said adhesive film

This invention aims to provide a protecting method for a semiconductor wafer which can prevent breakage of a semiconductor wafer even when a semiconductor wafer is thinned to a thickness of 200 &mgr;m or less, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method. According to this invention, there is provided a protecting method for a semiconductor wafer comprising a first step of adhering a surface protecting adhesive film for a semiconductor wafer to a circuit-formed surface of the semiconductor wafer, a second step of processing a non-circuit-formed surface of the semiconductor wafer and a third step of adhering a bonding film for die bonding to the non-circuit-formed surface of the semiconductor wafer, characterized in that the third step is performed without peeling the surface protecting adhesive film for the semiconductor wafer, and an adhesive film in which an adhesive layer is formed on one surface of a substrate film at least one layer of which is made of a resin having a melting point of 200&deg; C. or more is used, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method.

Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method

A method of producing a semiconductor wafer, which can prevent the breakage of a wafer, and also can reduce the working time in a series of operations attended by back surface grinding of the semiconductor wafer. The method involves producing a semiconductor wafer wherein an adhesive tape is applied on the surface of the semiconductor wafer and, after grinding the back surface of the semiconductor wafer using a grinding machine, the adhesive tape is peeled off, said process comprises using an adhesive tape having heat shrinkability as the adhesive tape, grinding the back surface of the semiconductor wafer and heating the adhesive tape in the grinding machine, thereby peeling off the adhesive tape from the surface of the semiconductor wafer.

Method of producing semiconductor wafer

An object of the invention is to provide a preparation process of a semiconductor wafer, in which breakage of the wafer on grinding the back surface of the wafer and on peeling the adhesive tape is prevented, and the operation time can be reduced. The preparation process of a semiconductor wafer comprises the steps of: adhering an adhesive tape on a front surface of a semiconductor wafer; grinding a back surface of the semiconductor wafer by a grinding machine; peeling the adhesive tape; and cleaning the front surface of the semiconductor wafer, wherein an adhesive tape having heat shrinkability is used as the adhesive tape, and after grinding the back surface of the semiconductor wafer, warm water at a temperature of from 50 to 99.degree. C. is poured to peel the adhesive tape in a wafer cleaning machine, and the front surface of the semiconductor wafer is cleaned in the wafer cleaning machine.

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Nagoya, Japan

Makoto Kataoka