Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Ulvac, Inc.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Makoto Kadoguchi

Takao Fujikawa

Yutaka Narukawa

Takahiko Ishii

Tsuneharu Masuda

Kohei Suzuki

Tomoyasu Kondou

Yasushi Mizusawa

Yoshihiko Sakashita

Yoichi Inoue

Takuya Masui

Yoji Taguchi

Yuji Taguchi

A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.

Method of forming a wiring film by applying high temperature/high pressure

The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

High-temperature and high-pressure treatment device

An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Apparatus for high-temperature and high-pressure treatment

A high-temperature high-pressure processing method for semiconductor wafers in which semiconductor wafers are charged into a pressure vessel to carry out processing under the gas atmosphere of high-temperature high-pressure, wherein the high-temperature high-pressure processing is carried out in the state that an anti-oxidizing body (an oxygen getter member) formed of a material having properties in which oxygen is apt to diffuse into interior is arranged within the pressure vessel whereby the anti-oxidizing body takes oxygen into the pressure vessel, thus preventing oxygen within the pressure vessel from being reduced to oxidize the surfaces of the semiconductor wafers in the high-temperature high-pressure processing.

High-temperature high-pressure processing method for semiconductor wafers, and an anti-oxidizing body used for the method

Method of forming interconnect film

An inner vessel,capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel,the inner vessel,is provided with a gas introducing portion,at a lower position thereof free from the effect a high temperature atmosphere formed by heaters,and,a filter,is disposed to the gas introducing portion,and a check valve,is disposed to the inner vessel,for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Pressure processing apparatus for semiconductors

Method of forming metal wiring film

In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.

Method and device for high-temperature, high-pressure treatment of semiconductor wafer

Growing community of inventors

Takasago, Japan

Makoto Kadoguchi