Canon Kabushiki Kaisha

Makoto Iwakami

Shoji Nishida

Masaaki Iwane

Masaki Mizutani

Noritaka Ukiyo

Takehito Yoshino

Tatsumi Shoji

Tetsuro Saito

Katsumi Nakagawa

Shinichi Yamashita

Yukiko Iwasaki

A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same

An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Apparatus for producing semiconductor thin films on moving substrates

The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.

Separation method of semiconductor layer and production method of solar cell

A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Method for producing semiconductor thin films on moving substrates

An information signal recording apparatus, which includes a pilot signal generator for generating a tracking control pilot signal having a predetermined frequency, a generator for generating an information signal to be recorded, and a recorder for recording the pilot signal on a first area of a recording track, and for recording the information signal on a second area of the recording track. A component of the predetermined frequency of the pilot signal is made to be smaller in a leading portion and in an ending portion of the first area than in other portions of the first area.

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Kanagawa, Japan

Makoto Iwakami