Ngk Insulators, Inc.

Toyoda Gosei Co., Ltd.

Osaka University

Other

Makoto Iwai

Katsuhiro Imai

Fumio Kawamura

Takatomo Sasaki

Yusuke Mori

Takashi Yoshino

Takanao Shimodaira

Shiro Yamazaki

Shuhei Higashihara

Minoru Imaeda

Seiji Nagai

Takayuki Hirao

Takayuki Sato

Yasuo Kitaoka

Yoshitaka Kuraoka

Shiro Yamasaki

Masahiro Sakai

Koji Hirata

Mikiya Ichimura

Makoto Ohmori

Yoshio Kikuchi

Shuuhei Higashihara

Naoki Shibata

Iwao Ohwada

Masashi Yoshimura

Tatsuo Kawaguchi

Shoichiro Yamaguchi

Yuichi Iwata

Yoshihiko Yamamura

Yasuhide Yakushi

Ken-ichi Noda

Minoru Kawahara

Hiroaki Isobe

Naoya Miyoshi

Yuji Yamada

The present invention relates to an optical component and a transparent sealing member. An optical component has: at least one optical element; and a package that houses therein the optical element. The package has: a mounting board on which the optical element is mounted; a transparent sealing member bonded on the mounting board; a recessed section surrounding the optical element mounted on the mounting board; and a refractive index matching agent applied to the inside of the recessed section. The package has at least one groove in communication with the outside from the recessed section.

Optical component and transparent sealing member

A crystal substrateincludes an underlying layerand a thick film. The underlying layeris composed of a crystal of a nitride of a group 13 element and includes a first main faceand a second main face. The thick filmis composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layerincludes a low carrier concentration regionand a high carrier concentration regionboth extending between the first main faceand the second main face

Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

The present invention relates to an optical component and a transparent body used in the optical component. The optical component includes at least one optical element that radiates ultraviolet light, and a package that accommodates the optical element. The package includes a mounting substrate on which the optical element is mounted, and a transparent body that is bonded to the mounting substrate with an organic-based adhesive layer therebetween. The package has a structure in which the ultraviolet light is transmitted through the transparent body but not guided to the adhesive layer, and the ultraviolet light does not directly come into contact with the adhesive layer.

Optical component and transparent body

An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 &#x3bc;m and a width of 5 to 100 &#x3bc;m, and the recesses have a bottom thickness of 2 &#x3bc;m or more and a width of 50 to 500 &#x3bc;m.

Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis

Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1&#xd7;10&#x3a9;&#xb7;cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1&#xd7;10/cmor less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlInGaN (0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1).

Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate

It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

Method for producing nitride crystal

A seed crystal substrateincludes a base bodyand a plurality of rows of stripe-shaped seed crystal layersformed on the base body. An upper faceof the seed crystal layeris (11-22) plane, a grooveis formed between the adjacent seed crystal layers, and a longitudinal direction of the grooveis a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.

Seed crystal substrates, composite substrates and functional devices

A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1&#xd7;10/cmor more and low carrier concentration regions having a carrier concentration of 9&#xd7;10/cmor less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.

Group 13 element nitride crystal layer and function element

A composite substrate includes a sapphire substrate and a layer of a nitride of a group 13 element provided on the sapphire substrate. The layer of the nitride of the group 13 element is composed of gallium nitride, aluminum nitride or gallium aluminum nitride. The composite substrate satisfies the following formulas (1), (2) and (3). A laser light is irradiated to the composite substrate from the side of the sapphire substrate to decompose crystal lattice structure at an interface between the sapphire substrate and the layer of the nitride of the group 13 element. 5.0&#x2264;(an average thickness (&#x3bc;m) of the layer of the nitride of the group 13 element/a diameter (mm) of the sapphire substrate)&#x2264;10.0 . . . (1); 0.1&#x2264; a warpage (mm) of said composite substrate&#xd7;(50/a diameter (mm) of said composite substrate)&#x2264;0.6 . . . (2); 1.10&#x2264;a maximum value (&#x3bc;m) of a thickness of said layer of said nitride of said group 13 element/a minimum value (&#x3bc;m) of said thickness of said layer of said nitride of said group 13 element . . . (3)

Method for separating group 13 element nitride layer, and composite substrate

A crystal substrate is composed of a crystal of a nitride of a group 13 element and has a first main face and a second main face. The crystal substrate includes a low carrier concentration region and a high carrier concentration region both extending between the first main face and second main face. The low carrier concentration region has a carrier concentration of 10/cmor lower and a defect density of 10/cmor lower. The high carrier concentration region has a carrier concentration of 10/cmor higher and a defect density of 10/cmor higher.

Group 13 element nitride crystal substrate and function element

Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1&#xd7;10&#x3a9;&#xb7;cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1&#xd7;10/cmor less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1).

A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

Group 3B nitride crystal substrate

The maximum value of peak intensities of cathode luminescence of a wavelength corresponding to a band gap of gallium nitride and in a measured visual field of 0.1 mm&#xd7;0.1 mm is 140 percent or higher of an average value of the peak intensities of the cathode luminescence, provided that the peak intensities of the cathode luminescence are measured on a surface of the gallium nitride substrate.

Gallium nitride substrates and functional devices

In the case that a functional layer, made of a nitride of a group 13 element, is formed on a composite substrate including a sapphire body and a gallium nitride crystal layer disposed over the sapphire body, the deviation of the function is prevented. The composite substrateincludes a sapphire bodyA and a gallium nitride crystal layerdisposed over the sapphire body. Aa warpage of the composite substrate is in a range of not less than +40 &#x3bc;m and not more than +80 &#x3bc;m per 5.08 cm in length.

Composite substrates and functional device

A composite substrateincludes a sapphire bodyA, a seed crystal filmcomposed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layergrown on the seed crystal filmand having a thickness of 200 &#x3bc;m or smaller. Voidsare provided along an interface between the sapphire bodyA and the seed crystal filmin a void ratio of 4.5 to 12.5 percent.

Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices

Growing community of inventors

Kasugai, Japan

Makoto Iwai