Mitsubishi Chemical Corporation

Tohoku University

Other

Sharp Kabushiki Kaisha Corporation

Nihon Ceratec Co., Ltd.

Makoto Ishikawa

Yasuhiro Kawase

Fumikazu Mizutani

Yasuyuki Shirai

Masafumi Kitano

Hitoshi Morinaga

Noriyuki Saitou

Tadahiro Ohmi

Toshiaki Sakakihara

Kazunori Inoue

Makoto Ikemoto

Keiichi Sawai

Takuji Yoshida

Masaki Munakata

Satoshi Kumon

Hirohito Komatsu

Hiroshi Takaha

Atsushi Itou

Yoshihide Suzuki

Masaru Miyoshi

Masakazu Motoi

Nobuhiro Goda

Yukio Kishi

Kazuma Teramoto

Yoshio Kamiharaguchi

A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cmor less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Metal oxide film, laminate, metal member and process for producing the same

A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure

To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B):

Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device

A high-quality oxide film which is free from a pinhole and surface roughing caused by anodic oxidation and which has surface smoothness on a surface of a material to be treated containing a metal as a principal component. An electrolyte solution which is used for forming an oxide film on a surface of a material to be treated containing a metal as a principal component by anodic oxidation, the electrolyte solution containing a non-aqueous solvent containing an alcoholic hydroxyl group and having 4 or more carbon atoms as a main solvent. This non-aqueous solvent preferably contains two or more alcoholic hydroxyl groups and is especially preferably one or two or more members selected from the group consisting of diethylene glycol, triethylene glycol and polyethylene glycol. A method of forming an oxide film including a step of anodically oxidizing a material to be treated containing a metal as a principal component in this electrolyte solution.

Method of forming oxide film by anodically oxidizing in an electrolyte solution

An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

Etching liquid

A gold plating solution comprising iodide ions, gold iodide complex ions and a non-aqueous solvent, which is less toxic and stable, while having a performance comparable to a cyanide type gold plating solution. The present invention further provides a gold plating solution comprising iodide ions, gold iodide complex ions, a non-aqueous solvent and a water-soluble polymer, which is less toxic and stable, while having a performance comparable to a cyanide type gold plating solution and which is capable of forming a gold plating film in which gold crystal particle sizes are very fine and grain boundaries are dense. The present invention further provides a gold plating method employing such a gold plating solution.

Gold plating solution and gold plating method

A silver or silver alloy thin layer on a substrate is etched by an etching liquid uniformly without producing an etching residue while avoiding side etching due to over etching. The etching liquid contains silver ions in a range from 0.005 to 1 weight %. The etching liquid is fed to a tank or an etching liquid feeding apparatus, and then brought into contact with the silver or silver alloy thin layer on the substrate.

Etching method and etching liquid

An etchant for patterning thin metal films by wet etching and in particular, an etchant for use in producing semiconductor devices, such as semiconductor elements and liquid-crystal display elements, is for application to a multilayer film having a first layer made of aluminum or an aluminum alloy having formed thereon a second layer made of aluminum or an aluminum alloy each containing at least one element selected from nitrogen, oxygen, silicon, and carbon, and has a phosphoric acid content of from 35 to 65% by weight and a nitric acid content of from 0.5 to 15% by weight; and an etching is performed using the etchant.

Etchant and method of etching

Growing community of inventors

Fukuoka, Japan

Makoto Ishikawa