Fujitsu Corporation

Other

Seiko Instruments Inc

Toyohashi University of Technology

Asahi Kasei Kabushiki Kaisha

Denso Corporation

Japan Science and Technology Agency

Japan Science and Technology Corporation

Toyoko Kagaku Co., Ltd.

Makoto Ishida

Kazuaki Sawada

Hidekuni Takao

Minoru Sudo

Daisuke Akai

Tetsuya Hanawa

Masahiro Konno

Hiroyuki Wado

Susumu Aoyama

Yoshikazu Watanabe

Noriyuki Matsushita

Mitsunori Maeda

Hiroyuki Nagatani

Masahiro Matsui

Takashi Morishita

Tetsuro Nakamura

Hideki Muto

Yasuyuki Kitada

Yuki Maruyama

Keisuke Hirabayashi

Mikako Yokawa

Toshinori Yoshitsuru

Yoshinori Matsumoto

Yoshitaka Moriyasu

Yasuji Hikita

Shoji Kawahito

Yiping Guo

A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.

Piezoelectric element and method of producing the same

A power generation circuit has one of an antenna or a coil that receives an ambient radio wave. A rectifying circuit is connected to the antenna or the coil for rectifying a signal from the antenna or the coil receiving the ambient radio wave. A booster circuit is connected to and boosts an output of the rectifying circuit. A storage circuit is connected to the booster circuit and stores an output power obtained from the rectifying circuit for driving a load without the use of a power source or a battery. A switching circuit is operable in an ON-state thereof to connect the storage circuit to the load when a voltage of the storage circuit is equal to or greater than a preselected voltage.

Power generation circuit for generating and storing electric power utilizing radio wave energy

An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of &#x3b3;-AlOformed as a buffer layer on a silicon substrate. The monocrystalline &#x3b3;-AlO film is formed on the silicon substrate which is the lowermost layer of an MFMIS structure. On the monocrystalline &#x3b3;-AlOfilm, there is formed an electrically conductive oxide in the form of a LaNiO3 film as a lower electrode. On the LaNiO3 film, there is formed a PZT thin film which is a ferroelectric material. On the PZT thin film, there is formed a Pt film as an upper electrode.

Laminar structure on a semiconductor substrate

A broadcast receiver includes a broadcast receiving unit that receives a broadcast signal; a general broadcast channel storing unit that stores general broadcast channel information, which is receivable in an area by the receiving unit in advance; a position detecting unit that detects a current position; a matching determination unit that compares the receivable channel received by the receiving unit with the general broadcast channel information of the area corresponding to the current position detected by the detecting unit that is read out from the general broadcast channel storing unit, and then determines whether or not the receivable channel matches the general broadcast channel information; a separation display unit that displays the receivable channel that does not match the general broadcast channel information as a local broadcast channel, and displays the location broadcast channel separately from the receivable channel.

Broadcast receiver and channel list display method

A power generation circuit generates and stores electric power utilizing electromagnetic wave energy. The power generation circuit has one of an antenna or a coil that receives an electromagnetic wave. A rectifying circuit is formed on a silicon substrate and rectifies a signal from the antenna or the coil. A storage circuit stores an output power obtained from the rectifying circuit for driving a load. A MOS transistor has a source and a drain connected to an output of the storage circuit and the load, respectively, so that the load is connected to the storage circuit in accordance with a threshold voltage of the MOS transistor.

Power generation circuit using electromagnetic wave

The present invention relates to finger authentication and improves a fingerprint authenticating function by excluding errors caused depending on detection forms. When a fingerprint is detected, form data representing the detection form are captured and, when inputted fingerprint data are compared with registered fingerprint data, authentication is executed referring to the form data. Thereby, the errors caused depending on the detection forms can be excluded and the fingerprint authenticating function is improved. A plurality of different detection form of fingerprint data are registered, a comparison target is selected from the fingerprint data, and the comparison target is compared with the inputted fingerprint data. Thereby, the fingerprint authenticating function is improved. To match the detection form, the apparatus may be configured to compare the registered fingerprint data with the inputted fingerprint data rotating either thereof and, thereby, similarly, the fingerprint authenticating function can be improved.

Apparatus and method for fingerprint authentication, portable terminal device, and recording medium

An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.

Electronic circuit device having silicon substrate

The present invention relates to a portable terminal provided with a camera to take a picture of a subject comprised of a lens, and an image pickup device. The invention is aimed to provide a portable terminal in which a mirror image or information about photographing status is displayed on a first display which can be seen from the object side when an object is photographed using the portable terminal, and the image is displayed on a second display which can be seen from the to-be-taken subject so that a person to be photographed can easily check his/her image or photographing status. To this end, the first display is provided on the surface on which the lens is provided and the second display is provided on a side different from the side on which the lens is provided. Provision is made of a display unit that displays the image, photographed by directing the lens to the subject, on the first and the second displays.

Portable terminal equipped with camera and adapted for self-imaging

A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown &#x3b3;-AlOsingle crystal film () is disposed on a semiconductor single crystal substrate (), and an epitaxial single crystal Pt thin film () is disposed on the &#x3b3;-AlOsingle crystal film ().

Ultrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure

A method for measuring incident light employing a simple semiconductor structure provided with a single electron-capturing section corresponding to incident light, and a sensor having a spectroscopic mechanism employing the same are provided. A spectroscopic sensor includes a semiconductor substrate (), a first diffusion layer () provided on the semiconductor substrate (), a second diffusion layer ()provided at a part of the first diffusion layer (), and an electrode ()film provided on the first diffusion layer () with an insulating film () provided therebetween, the electrode film () transmitting the incident light and being applied with a gate voltage. In the spectroscopic sensor, the gate voltage is varied, the depth (position) for capturing electrons generated in the first diffusion layer () by the incident light is varied so as to correspond to the gate voltage, and a current indicating the quantity of the electrons is measured. Thereby, wavelength and intensity of the incident light are measured.

Measuring method of incident light and sensor having spectroscopic mechanism employing it

A highly-sensitive, pyroelectric infrared sensing method and apparatus that can detect infrared temperature with high sensitivity throughout the entire electromagnetic wave range including millimeter waves and radioactive rays. The supersensitive infrared sensor is an infrared sensor of a type that emits electrons from a surface of a ferroelectric body having no emitter. Therefore, a gate electrode is not required to be provided in the vicinity of an emitter. Accordingly, since electrons are emitted directly from a PZT thin film, which serves as a ferroelectric body, in proportion to a temperature variation caused by irradiation of an infrared ray, only provision of an anode is required. Further, designation of machining conditions of the surface of the ferroelectric body is unnecessary.

Highly-sensitive, pyroelectric infrared sensing method and apparatus

In an accelerometer, the stress is detected through electric amplification with the use of detecting elements having an amplification function arranged on beams and, with the use of a differential amplifier circuits formed on the support base , an acceleration component in a detection axis direction to which the stress is applied is outputted as the differential mode and acceleration components in the other axis directions are outputted as the common mode, so that each axis sensitivity ratio between the detection axis sensitivity and the other axis sensitivities is enhanced largely.

Silicon integrated accelerometer

When producing an SOS substrate by growing a silicon layer on a sapphire substrate, or when producing an SOI substrate by depositing an oxide layer or a fluoride layer, as an intermediate layer, on a silicon substrate, and growing a silicon layer on the deposited layer, (A) after growth of the silicon layer, heat treatment is performed in an oxidizing atmosphere to oxidize a part of a surface side of the silicon layer, and the resulting silicon oxide layer is removed by etching with hydrofluoric acid. (B) With this silicon layer as a seed layer, a silicon layer is regrown homoepitaxially thereon.

SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same

There is provided a remaining battery capacity display device for use in a communication device powered by a battery, which is capable of displaying an exact remaining battery capacity even if battery current consumption varies. A voltage detection device detects a value of voltage of the battery to deliver the detected voltage value to a remaining battery capacity calculation device within a controller, while a current consumption calculation device calculates a battery current consumption based on a transmission output level of a transmission/reception block to deliver the calculated battery current consumption to the remaining battery capacity calculation device. The remaining battery capacity calculation device calculates a remaining battery capacity based on the received values of the battery voltage and battery current consumption. Functions employed by the current consumption calculation device and the remaining battery capacity calculation device for respective calculating operations are prepared in advance based on measurement data. A display control device causes a display device to carry out display operation based on the remaining battery capacity calculated by the remaining battery capacity calculation device.

Remaining battery capacity display device

In a first aspect of the invention, when it is expected to disconnect a booster during a call, the station class mark is changed to that applicable when a portable telephone is used as an independent unit in accordance with a key input from the user before the initiation of the call. In a second aspect of the invention, the telephone number of the remote party is stored in a memory during a call. When a connection or disconnection of a booster is detected, the call is terminated, and a redialing operation is automatically performed using the stored telephone number. In a third aspect of the invention, when the connection of a booster is detected during a call, an instruction is given to the booster to operate in a portable telephone mode. In a fourth aspect of the invention, when the connection or disconnection of a booster is detected during a call, a request to change the station class mark is sent to the base station.

Growing community of inventors

Toyohashi, Japan

Makoto Ishida