Mitsubishi Chemical Corporation

Makoto Ikemoto

Yasuhiro Kawase

Hideki Kiritani

Masanori Yamazaki

Tomohide Murase

Mari Abe

Hitoshi Morinaga

Mineo Nishi

Koji Nakano

Yasunori Matsushita

Makoto Takahashi

Makoto Ishikawa

Takayoshi Hirai

Tadashi Kusumoto

Atsushi Itou

Masaya Sugiyama

Iho Kamimura

Yasunori Matshushita

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 &#x3bc;m and at most 1 &#x3bc;m, and which are spherical, and a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s.

Agglomerated boron nitride particles, composition containing said particles, and three- dimensional integrated circuit having layer comprising said composition

To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25&#xb0; C. of at most 50 Pa&#xb7;s, an amine compound (B) having a melting point or softening point of at least 80&#xb0; C., and an amine compound (C) having a melting point or softening point of less than 80&#xb0; C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and process for producing layered semiconductor device

To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A).

Interlayer filler composition for three-dimensional integrated circuit

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m&#xb7;K) between the semiconductor substrate.

Three-dimensional integrated circuit laminate, and interlayer filler for three-dimensional integrated circuit laminate

Agglomerated boron nitride particles, composition containing said particles, and three-dimensional integrated circuit having layer comprising said composition

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property, a three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(rrrK) between the semiconductor substrate.

To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B):

Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device

A cleaning solution for cleaning a substrate for semiconductor devices and a cleaning method using the said cleaning solution, which comprises at least the following components (A), (B) and (C):

Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same

To provide a cleaning solution for a substrate for a semiconductor device capable of removing particle contamination, organic contamination and metal contamination at the same time without corroding the substrate surface, and further having good water rinsability and capable of making the substrate surface highly clean in a short time, and a cleaning method.

Cleaning solution for substrate for semiconductor device and cleaning method

A photosensitive resin composition comprising an alkali-soluble resin (A), a compound (B) containing a 1,2-quinonediazide group, and a compound (C) of the following formula (I): ##STR1## wherein each of Ar.sup.1 to Ar.sup.3 which are independent of one another, is an aromatic hydrocarbon group which may be substituted by a halogen atom, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group, and R is a hydrogen atom, a hydroxyl group, a C.sub.1-4 alkyl group or a C.sub.1-4 alkoxy group.

1,2 quinone diazide photosensitive resin composition containing select

A photosensitive resin composition comprising an alkali-soluble resin, a quinonediazide-type photosensitive compound and a solvent, wherein the alkali-soluble resin is a polycondensation product of 1 at least one phenolic compound (A) of the following formula (A) with 2 formaldehyde (a) and at least one carbonyl compound (b) of the following formula (B), in which the mixing ratio of the formaldehyde (a) to the carbonyl compound (b) is within a range of from 1/99 to 99/1 in terms of the molar ratio of (a)/(b), and the alkaline soluble resin has partial structures of the following formula (C), in which the weight ratio of repeating units (.beta.) wherein m is from 1 to 5, to repeating units (.alpha.) wherein m is 0, i.e. the weight ratio of (.beta.)/(.alpha.), is at most 0.25: ##STR1## wherein R.sup.1 is a group of the formula R.sup.2, OR.sup.3, COOR.sup.4 or CH.sub.2 COOR.sup.5, wherein R.sup.2 is a C.sub.1-4 alkyl group, each of R.sup.3, R.sup.4 and R.sup.5 which are independent of one another, is a hydrogen atom or a C.sub.1-4 alkyl group, n is an integer of from 0 to 3, provided that when n is 2 or 3, a plurality of R.sup.1 may be the same or different, each of R.sup.6 and R.sup.7 which are independent of each other, is a hydrogen atom, a C.sub.1-4 lower alkyl group, an aryl group or an aralkyl group, R.sup.8 is the same group as R.sup.1, R.sup.9 is the same group as R.sup.6, R.sup.10 is the same group as R.sup.7, p is the same integer as n, provided that R.sup.6 and R.sup.7, and R.sup.9 and R.sup.10, are not simultaneously hydrogen atoms, and m is an integer of from 0 to 5.

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Kitakyushu, Japan

Makoto Ikemoto