Lapis Semiconductor Co., Ltd.

Makoto Higashihira

Yuuki Doi

Masao Tsujimoto

Toshiyuki Orita

Takao Kaji

Tomomi Yamanobe

Toshifumi Kobe

Kiyofumi Kondou

The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.

Semiconductor device having super junction structure with varying width

Growing community of inventors

Miyazaki, Japan

Makoto Higashihira