Sumitomo Chemical Company, Limited

Makoto Hanabata

Yasunori Uetani

Fumio Oi

Hirotoshi Nakanishi

Koji Kuwana

Takeshi Hioki

Akihiro Furuta

Seimei Yasui

Haruyoshi Osaki

Hiroaki Sugimoto

Yukio Hanamoto

Haruyoshi Ozaki

Yasuyuki Kato

Takashi Maruyama

Kunihiko Tanaka

Katsuji Ueno

Jun Tomioka

Yukikazu Uemura

Naoyoshi Jinno

Osamu Hiroaki

Takao Ninomiya

A positive resist composition which comprises a 1,2-quinone diazide compound and an alkali-soluble resin containing a polyphenol compound (I) of the general formula:

Radiation-sensitive positive resist composition comprising a 1,2-quinone

A positive resist composition which comprises, in admixture, a photosensitive 1,2-quinone diazide compound, an alkali-soluble resin to bind ingredients and polyphenol compound to control a dissolution rate in a developer represented by the formula: ##STR1## wherein R is C.sub.1-18 or hydrogen, the composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.

Radiation-sensitive positive resist composition

A positive resist composition which comprises, in admixture, a photosensitive 1,2-quinone diazide compound, an alkali-soluble resin to bind ingredients and polyphenol compound to control a dissolution rate in a developer having a molecular weight of not more than 550 and represented by the general formula: ##STR1## wherein a, b, c, d, e, and f are the same or different and a number of 0-3, provided that d+f is not less than 1, and provided that if b, d and f are 1, then at least one of a, c, and e is not 0; R.sub.1, R.sub.2 and R.sub.3 are the same or different and a C.sub.1 -C.sub.18 alkyl group, a C.sub.1 -C.sub.18 alkoxy group, a carboxyl group or a halogen atom; R.sub.4 is a hydrogen atom, a C.sub.1 -C.sub.18 alkyl group or aryl group, wherein an amount of said 1,2-quinone diazide compound is from 5 to 100% by weight and an amount of said polyphenol compound is from 4 to 40% by weight based on the total weight of said alkali-soluble resin, wherein the resist composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.

A positive resist composition which comprises in admixture an alkali-soluble resin and, as a sensitizer, first and second quinone diazide sulfonic acid esters of a phenol compound, wherein

Resist composition comprising a quinone diazide sulfonic diester and a

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are the same or different and each a hydrogen atom, an alkyl group, a halogen atom or a hydroxyl group, provided that at least one of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 are the same or different and each a hydrogen atom, an alkyl, an aryl group, a halogen atom or a hydroxyl group, provided that at least one of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 is a hydroxyl group; X is ##STR2## in which R.sub.1 and R.sub.2 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cyclo-alkyl group, an alkoxy group or an aryl group, provided that when at least one of R.sub.1 and R.sub.2 is a hydrogen atom, an alkyl or aryl group is present at the ortho position to a hydroxyl group which is present at the ortho position to X provides a positive resist composition which has a high .gamma.-value.

Resist composition, novel phenol compound and quinone diazide sulfonic

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I) or (II): ##STR1## wherein a, c and d are the same or different and a number of 0 to 3, provided that when a is 0 or 3, b is a number of 0 to 3 or when a is 1 or 2, b is 0, 1 or 2, and a+b and c+d are not less than 2; R and R' are the same or different and an alkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.

Positive photoresist composition containing alkali-soluble resin and

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1 and Y.sub.2 are each a hydrogen atom, an alkyl group or a hydroxyl group, provided that at least one of Y.sub.1 and Y.sub.2 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are the same or different and each a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or halogen atom, provided that at least two of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are hydroxyl groups; R.sub.1, R.sub.2 and R.sub.3 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.

Positive resist composition containing quinone diazide sulfonic acid

A positive type photoresist composition comprising a novolak resin and O-quinone diazide compound, the novolak resin being one which is obtained by the addition condensation reaction of a phenol and formaldehyde which is performed in one stage by using as a catalyst an organic acid salt of a divalent metal which is more electropositive than hydrogen, or in two stages by using an acid catalyst in the subsequent stage, the phenol being at least one compound represented by the formula ##STR1## wherein R is hydrogen or an alkyl group of carbon number 1 to 4, the compound being such that the average carbon number in the substituent per one phenol nucelus is 0.5 to 1.5 and the ones with the substituent at the ortho- or para-position with respect to the hydroxyl group account for less than 50 mol %, is disclosed. The positive type photoresist composition of the invention has an improved resolving power, i.e., .gamma.-value.

Positive type high gamma-value photoresist composition with novolak

A novolak resin for a positive photoresist is provided herein, which resin is produced by the addition condensation reaction of a phenol with formaldehyde. This novolak resin has improved heat resistant and sensitivity properties and the thickness retention of the novolak resins are very high. The novolak resins are characterized in that the area ratio of the gel permeation chromatographic pattern (GPC) as measured by the use of a UV(254 nm) detector, is as follows: a range wherein the molecular weight, calculated as polystyrene, is from 150 to less than 500, not including a phenol and the unreacted monomer, is from 8 to 35%, hereinafter referred to as an A region, the range wherein the molecular weight calculated as polystyrene is from 500 to less than 5000 is from 0 to 30%, hereinafter referred to as a B region, and the range wherein the molecular weight calculated as polystyrene exceeds 5000 is from 35 to 92%, hereinafter referred to as the C region, and wherein the ratio of the B region to the A region is 2.50 or less.

Novolak resin for positive photoresist

A positive type photoresist composition comprising an m-hydroxy-.alpha.-methylstyrene polymer and as a photo-sensitizer a quinonediazide compound is disclosed. A positive type photoresist composition comprising an m-hydroxy-.alpha.-methylstyrene polymer, a novolak resin, and as a photo-sensitizer a quinonediazide compound, is also disclosed.

Positive photoresist composition with m-hydroxy-.alpha.-methylstyrene

A plastic container having improved properties as a barrier against gases and water vapor made from a thermoplastic resin composition comprising (A) an aromatic polyester carbonate composed of an aromatic dicarboxylic acid moiety, an aromatic dihydroxy compound moiety and a carbonate moiety and (B) a polyalkylene terephthalate and/or a polyalkylene oxybenzoate in a ratio of 100 parts by weight of said aromatic polyester carbonate to 100 parts by weight or less of said polyalkylene terephthalate and/or polyalkylene oxybenzoate.

Plastic container improved in barrier properties against gases and water

A process for producing an aromatic polyester composition, which is characterized in that in producing an aromatic polyester represented by the general formula A, ##STR1## (wherein X is an alkylene group having 1 to 4 carbon atoms, --O--, --SO.sub.2 --, --S--, or --CO--; m and n are each 0 or 1; the ratio of d to e is in the range of from 1:1 to 10:1; the ratio of e to f is in the range of from 9:10 to 10:9; and the substituents attached to the benzene ring are in para or meta position to one another), the polymerization is carried out by the method of bulk polymerization, using substantially no solvent, and in the presence of at least one polymer selected from the group consisting of polyalkylene terephthalates, polyphenylene sulfides, aromatic polysulfones, and aromatic polyesters represented by the general formula B, ##STR2## wherein (p+q) is in the range of from 10 to 100 and p/(p+q).gtoreq.0.8.

Process for producing an aromatic polyester composition

In a process for producing an aromatic polyester by reacting under application of heat (A) an aromatic dicarboxylic acid and/or an ester-forming derivative thereof, (B) an aromatic hydroxycarboxylic acid and/or an ester-forming derivative thereof, and (C) a dihydroxy aromatic compound produced by the method of alkali fusion and containing 4,4'-dihydroxydiphenyl as major constituent and/or an ester-forming derivative of said dihydroxy aromatic compound, the improvement which comprises employing as said 4,4'-dihydroxydiphenyl, a 4,4'-dihydroxydiphenyl of such a quality that a solution of 1 part by weight of it dissolved in 100 parts by weight of a mixture comprising methanol and water in a weight ratio of 70:30 will show a pH of 6.6 to 7.4. The polyester produced by the improved process shows little discoloration and is excellent in thermal resistance and mechanical properties.

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Hyogo, Japan

Makoto Hanabata