Canon Kabushiki Kaisha

Sumitomo Bakelite Company Limited

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Promerus, Lcc

Sony Corporation

Nikon Corporation

Sony Group Corporation

Makoto Fujiwara

Koji Choki

Tetsuya Mori

Keizo Takahama

Mutsuhiro Matsuyama

Kei Watanabe

Yoshinori Tanaka

Larry Funderburk Rhodes

Andrew Bell

Hiromi Ogata

Ramakrishna Ravikiran

Tetsuo Motomura

Dino Amoroso

Hirotaka Nonaka

Masahiro Igarashi

Ryuji Kaneko

Yumiko Otake

Koichi Morishita

Shunichi Kaizu

Katsuyuki Sekine

Daisuke Shiraishi

Satoshi Inaba

Masao Shingu

Masaaki Higuchi

Toshiaki Minami

Hiroyuki Yamasaki

Yasunari Nagamatsu

Yuuichi Katagishi

Koji Moriya

Hisashi Ishikawa

Masao Kato

Fumitaka Goto

Tetsuya Suwa

Atsushi Yagishita

Masaki Kondo

Tatsuya Kato

Shinji Mori

Akira Hokazono

Kazunari Ishimaru

Mariko Takayanagi

Daisuke Nishida

Wataru Ochiai

Masakazu Goto

Kazuya Imafuku

Hirohisa Kawasaki

Koushi Yoshibe

Hirokazu Ishigaki

Yoji Shirato

Koji Amano

Shinya Arai

Takashi Kurusu

Hiroshi Owari

Takeshi Murata

Kenji Miyao

Muneyuki Tsuda

Toshimitsu Fukase

Motoya Kaneta

A memory control apparatus controls access to a DRAM having a plurality of banks. The apparatus comprises a first generating unit configured to generate an access command in accordance with an access request for the DRAM and store the access command in a buffer; a second generating unit configured to generate a bank-designated refresh request for the DRAM; and an issuing unit configured to issue a DRAM command to the DRAM based on an access command stored in the buffer and a refresh request generated by the second generating unit. The second generating unit determines a bank for which the refresh request is generated, based on an access time for each bank of the DRAM by not less than one access command stored in the buffer.

Memory control apparatus and control method therefor

A semiconductor integrated circuit includes: a first voltage line on which a specific one of a power-supply voltage and a reference voltage appears; a second voltage line; a plurality of circuit cells each receiving power generated as a difference between a voltage appearing on the second voltage line and the other one of the power-supply voltage and the reference voltage; a plurality of switch transistors connected in parallel between the first and second voltage lines to serve as switch transistors including switch transistors each having different conducting-state resistances; and a switch conduction control section for controlling a transition of each of the switch transistors from a non-conducting state to a conducting state by turning on the switch transistors at separate points of time.

Semiconductor integrated circuit and power-supply control method

A semiconductor memory device includes first and second electrode films, an interlayer insulating film, a semiconductor pillar, and a first insulating film. The first electrode film extends in a first direction. The second electrode film is provided separately from the first electrode film in a second direction and extends in the first direction. The interlayer insulating film is provided between the first and the second electrode films. The first insulating film includes first and second insulating regions. A concentration of nitrogen in the first position of the second insulating region is higher than a concentration of nitrogen in the second position between the first position and the semiconductor pillar. A concentration of nitrogen in the first insulating region is lower than the concentration of the nitrogen in the first position.

Three-dimensional semiconductor memory device and method for manufacturing the same

A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.

Semiconductor memory device with charge-diffusion-less transistors

One embodiment includes: forming a laminated body by alternately laminating a conducting layer and an interlayer insulating layer on a substrate; forming a memory hole passing through the laminated body; forming a memory gate insulating layer including a charge storage layer on an inner wall of the memory hole; forming a first semiconductor layer on the memory gate insulating layer; forming a cover film on the first semiconductor layer; removing the memory gate insulating layer, the first semiconductor layer, and the cover film on a bottom surface of the memory hole, to expose the substrate; forming an epitaxial layer on the exposed substrate; removing the cover film; and forming the second semiconductor layer along the first semiconductor layer, to electrically couple: the substrate to the first semiconductor layer; and the substrate to the second semiconductor layer, via the epitaxial layer.

Nonvolatile semiconductor memory device and method of manufacturing the same

An optical module-member is provided, including: a layer-shaped optical waveguide; a light-emitting unit substrate including an insulating substrate, light-emitting element-mounting portions where light-emitting elements are configured to be mounted so as to be optically connected to the optical waveguide, and driving element-mounting portions which are electrically connected to the light-emitting element-mounting portions where driving elements for driving the light-emitting elements are configured to be mounted; and a light-receiving unit substrate which is separated from the light-emitting unit substrate, the light-receiving unit substrate including: an insulating substrate, light-receiving element-mounting portions where light-receiving elements are configured to be mounted so as to be optically connected to the optical waveguide, and signal amplification element-mounting portions which are electrically connected to the light-receiving element-mounting portions and where signal amplification elements for amplifying a signal from the light-receiving element are configured to be mounted.

Optical-module member, optical module, and electronic device

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body including a plurality of insulating layers and including a first insulating layer and a plurality of conductive layers including a first conductive layer; a first semiconductor film extending in a stacking direction of the stacked body; a second semiconductor film, the second semiconductor film having a maximum thickness thicker than a maximum thickness of the first semiconductor film in a first direction crossing the stacking direction; and a first insulating film. The second semiconductor film has an upper face, and a height of the upper face is lower than a height of the first conductive layer. The first insulating film has a lower end portion, and a height of the lower end portion of the first insulating film is lower than the height of the upper face of the second semiconductor film.

Semiconductor memory device and method for manufacturing same

In a memory control apparatus for issuing a command for a bank corresponding to a transfer request, the transfer request for the corresponding bank is stored. The column address of the transfer request stored at the first is compared with the column addresses of a plurality of subsequent transfer requests. It is determined based on the comparison result whether to issue a command with precharge or a command without precharge for the transfer request stored at the first. The determined command is issued.

Precharge control for memory bank commands

According to one embodiment, a non-volatile memory device includes electrodes, one semiconductor layer, conductive layers, and first and second insulating films. The electrodes are arranged side by side in a first direction. The semiconductor layer extends into the electrodes in the first direction. The conductive layers are provided between each electrode and the semiconductor layer and separated from each other in the first direction. The first insulating film extends between the conductive layers and the semiconductor layer in the first direction. The second insulating film is provided between each electrode and the conductive layers. The conductive layers become smaller in a thickness as the conductive layers are closer to an end in the first direction or a direction opposite to the first direction. The second insulating film includes a first film contacting the conductive layers, and a second film provided between each electrode and the first film.

Non-volatile memory device having a multilayer block insulating film to suppress gate leakage current

An object of the present invention is to provide an optical waveguide module which has a small optical coupling loss between the light element and the optical waveguide and can perform high-quality optical communication, a method for producing the optical waveguide module with high efficiency, and an electronic apparatus which includes the optical waveguide module and can perform high-quality optical communication, and the present invention provides an optical waveguide module including: an optical waveguide including a core portion, a clad portion that is provided to cover a side surface of the core portion, and an optical path-converting unit that is provided partway along the core portion or on an extended line of the core portion and that converts an optical path of the core portion to the outside of the clad portion; an optical element that is provided over the clad portion; a circuit board that is provided between the optical waveguide and the optical element and has a through-hole formed along an optical path connecting between the optical path-converting unit and the optical element; and a sealing portion that is transparent and is formed in a gap between the optical element and the circuit board; wherein a part of the sealing portion is inserted into the through-hole, and an inserted portion of the sealing portion functions as a lens for converging signal light passing though the optical path.

Optical waveguide module, method for producing optical waveguide module, and electronic apparatus

Memory accesses to a memory device that is in a power saving mode depend on the order of the issuance thereof. Thus, a period of time during which the memory is placed in the power saving mode is sometimes shortened, resulting in less effective power savings. A memory control apparatus, which is connected with a plurality of masters and a plurality of memories having a power saving mode, arbitrates memory accesses from the plurality of the masters, monitors whether each of the plurality of the memories is in the power saving state, and determines the priorities of the memory accesses according to the result of the detection of the power saving mode.

Memory control apparatus and memory control method for controlling the priority of memory accesses

An optical waveguide includes a clad layer, a core layer and a clad layer which are laminated together in this order from a lower side thereof. Within the core layer, a core portion and a side clad portion provided adjacent to the core portion so as to surround side surfaces of the core portion are formed. Further, a part of the side clad portion prevents a left side end of the core portion from being exposed outside. A mirror formation region is constituted from a region consisting of such a part of the side clad portion and a part of each of the clad layers located thereabove and therebelow. This mirror formation region is subjected to digging processing so that a concave portion is formed. An inner surface of this concave portion serves as the mirror. From the mirror, a material other than a material constituting the core portion, that is, a material constituting each of the clad layers and a material constituting the side clad portion are exposed.

Optical waveguide and optical waveguide manufacturing member

Growing community of inventors

Yokohama, Japan

Makoto Fujiwara