Semiconductor Energy Laboratory Co., Ltd.

Makoto Foruno

Shunpei Yamazaki

Hideaki Kuwabara

Yasuhiro Jinbo

Koji Dairiki

Satoshi Toriumi

Sachiaki Teduka

After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

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Atsugi, Japan

Makoto Foruno