Denso Corporation

Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Makoto Asai

Takeshi Fujii

Koh Yoshikawa

Seiji Momota

Masaki Koyama

Tetsuo Fujii

Hitoshi Abe

Takashi Shiigi

Tetsutaro Imagawa

Kenichi Yokoyama

Yukio Tsuzuki

Hiroki Nakamura

Minoru Murata

Yoshifumi Okabe

Masakiyo Sumitomo

Nozomu Akagi

Yasuhiro Kitamura

Muneo Tamura

Satoshi Kamijima

Kazuhiko Sugiura

Atsushi Komura

Yumi Maruyama

Takuya Sugie

Minoru Kobayashi

Between a source electrode () of a main device () and a current sensing electrode () of a current detection device (), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator () is larger than a product of the resistor and maximal current flowing through the current detection device () with reverse bias. A diffusion length of a p-body region () of the main device () is shorter than that of a p-body () of the current detection device (). A curvature radius at an end portion of the p-body region () of the main device () is smaller than that of the p-body () of the current detection device (). As a result, at the inverse bias, electric field at the end portion of the p-body region () of the main device () becomes stronger than that of the p-body region () of the current detection device (). Consequently, avalanche breakdown tends to occur earlier in the main devicethan the current detection device ().

Semiconductor device

A fuel supply system includes an electronic control unit that outputs a target fuel pressure for controlling a low-pressure pump and an engine status, and a fuel pump controller (FPC) that generates a drive signal for driving the low-pressure pump based on the target fuel pressure. The FPC is configured to obtain an actual fuel pressure, to set a duty ratio and to perform a feedback control for the actual fuel pressure to follow the target fuel pressure, and to set a lower limit guard value based on the engine status. The lower limit guard setter sets a duty ratio of 0% as the lower limit guard value when the engine status indicates a stop of the engine.

Fuel supply system

A fuel pump controller performs a feedback control of an actual fuel pressure of a feed pump to a command fuel pressure which is from an external element. The pump controller changes a gain for the feedback control to a value larger than a minimum value of the gain in response to an acceleration command information which is to accelerate a vehicle by using an internal combustion engine.

Fuel pump control device

A lower limit setting portion of a fuel pump control system sets a lower limit value depending on an engine operating mode. For example, it sets a duty ratio of 0% as the lower limit value, when the engine operating mode is in a STOP mode in a turned-on condition of an ignition switch. A duty-ratio calculating portion carries out a feedback control in order that an actual fuel pressure comes closer to a target fuel pressure by use of the lower limit value and calculates a duty ratio for driving a fuel pump by the feedback control. An abnormal condition determining portion determines an abnormal condition based on the duty ratio and pump current. The abnormal condition determining portion further determines based on a remaining fuel amount whether the abnormal condition is caused by a disconnection or whether the abnormal condition is caused by an idling operation of the fuel pump due to fuel shortage.

Fuel pump control system

A semiconductor device includes an n-conductive type semiconductor substrate having a main side and a rear side, a p-conductive type layer arranged over the main side of the substrate, a main side n-conductive type region arranged in the p-conductive type layer, a rear side n-conductive type layer arranged over the rear side of the substrate, a first trench which reaches the substrate and penetrates the main side n-conductive type region and the p-conductive type layer, a second trench which reaches an inside of the p-conductive type layer, a second electrode layer, which is embedded in the second trench and connected to the p-conductive type layer. Hereby, the semiconductor device, in which the recovery property of a diode cell can be improved without damaging the property of a MOS transistor cell or an IGBT cell and the surge withstand property does not deteriorate, can be obtained.

A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Method for manufacturing semiconductor device having SOI substrate

A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

Fabrication method of semiconductor device

Semiconductor device having SOI substrate and method for manufacturing the same

Semiconductor device and fabrication method of semiconductor device

A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.

Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor

Semiconductor device and manufacturing method thereof

A semiconductor substrate is bonded to a joining face of a sheet and is dividable along predetermined dividing lines of the semiconductor substrate by expanding the sheet so as to form semiconductor chips. A bonding layer for bonding a substrate face of the semiconductor substrate and the joining face of the sheet to each other can be formed in each region encircled with the predetermined dividing lines, between the substrate face and the joining face of the sheet. Thus, when the substrate face of the semiconductor substrate and the joining face of the sheet are bonded to each other, the bonding layer does not reach any of the predetermined dividing lines set between the regions. The bonding layer can be formed in dotted segments or a pattern of lattice between the substrate face of the semiconductor substrate and the joining face of the sheet.

Bonding method of semiconductor substrate and sheet, and manufacturing method of semiconductor chips using the same

Growing community of inventors

Kariya, Japan

Makoto Asai