Ulvac, Inc.

Makoto Arai

Junya Kiyota

Takashi Komatsu

Masahiro Matsumoto

Atsuhito Ihori

Yasuhiko Akamatsu

Koji Takahashi

Kyuzo Nakamura

Satoru Ishibashi

Masashi Kubo

Toshihiro Suzuki

Masaki Takei

Motoshi Kobayashi

Harunori Iwai

Tetsushi Fujinaga

Manabu Harada

Hidenori Yanagitsubo

Tomiyuki Yukawa

Yuuichi Oishi

Tatsunori Isobe

Eriko Mase

Yuichi Oishi

A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.

Thin substrate processing device

A touch panel of the present invention includes: a cover substrate; a connector being provided on an area of the cover substrate other than a display area, and including a color layer and a shield layer, the shield layer being formed from a multilayer structure, the multilayer structure being configured so that a metal layer and a dielectric layer which is thicker than the metal layer are alternately laminated; and a touch panel substrate being arranged to face the cover substrate with the connector interposed therebetween.

Touch panel, method of producing the same, optical thin film substrate and method of producing the same

A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets (to) which are disposed inside a sputtering chamber () so as to lie opposite to the process substrate (S), and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux (M) in front of each target are reciprocated at a constant speed in parallel with each of the targets. When each of the targets has reached a turning position of the reciprocating movement, the reciprocating movement of each of the targets is stopped for a predetermined period of time.

Method of forming thin film and apparatus for forming thin film

The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Magnetron sputtering apparatus and magnetron sputtering method

In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.

Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode

Growing community of inventors

Chigasaki, Japan

Makoto Arai