Nichia Corporation

Makoto Abe

Akiyoshi Kinouchi

Naoki Azuma

Keisuke Higashitani

Ryota Funakoshi

A light emitting element includes, successively from a lower side to an upper side, a first light emitting part having a first active layer, a tunnel junction part, and a second light emitting part having a second active layer. The first active layer includes a plurality of first well layers, and a first barrier layer positioned between two adjacent first well layers among the first well layers. The second active layer includes a plurality of second well layers, and a second barrier layer positioned between two adjacent second well layers among the second well layers. The second barrier layer is a nitride semiconductor layer containing an n-type impurity and gallium, and has an n-type impurity concentration higher than that of the first barrier layer. An n-type impurity concentration peak in the second barrier layer is located on a first light emitting part side.

Light emitting element

A nitride semiconductor light-emitting element includes a first n-side semiconductor layer, a first active layer located on the first n-side semiconductor layer, a first p-side semiconductor layer located on the first active layer, a second n-side semiconductor layer located on the first p-side semiconductor layer, a second active layer located on the second n-side semiconductor layer, and a second p-side semiconductor layer located on the second active layer. The second n-side semiconductor layer has a tunnel junction with the first p-side semiconductor layer. The first active layer includes a first well layer and a first barrier layer alternately arranged in a stacking direction. The second active layer includes a second well layer and a second barrier layer alternately arranged in the stacking direction. The second well layer is thinner than the first well layer. The second barrier layer is thicker than the first barrier layer.

Nitride semiconductor light-emitting element

A light emitting element includes a first light emitting part having a first active layer, a tunnel junction part, and a second light emitting part having a second active layer. The first active layer includes a plurality of first well layers, and a first barrier layer positioned between two adjacent first well layers among the first well layers. The second active layer includes a plurality of second well layers, and a second barrier layer positioned between two adjacent second well layers among the second well layers. The second barrier layer includes a nitride semiconductor layer that contains aluminum and gallium, and has an aluminum composition ratio higher than an aluminum composition ratio of the first barrier layer. An aluminum composition ratio peak of the second barrier layer is located on a first light emitting part side of the second barrier layer.

A light emitting element includes: an n-side semiconductor layer made of a nitride semiconductor; a p-side semiconductor layer made of a nitride semiconductor; and an active layer disposed between the n-side semiconductor and the p-side semiconductor layer and having a multi-quantum well structure in which a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers are alternately stacked, wherein the light emitting element includes, between at least one of the plurality of well layers and the barrier layer disposed adjacent thereto on the p-side semiconductor side: a first layer and a second layer disposed successively from the well layer side.

A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.

Light-emitting element comprising sapphire substrate with convex portions

A light emitting element includes: an n-side semiconductor layer; a p-side semiconductor layer; an active layer comprising a plurality of well layers and a plurality of barrier layers, and being located between the n-side semiconductor layer and the p-side semiconductor layer. The plurality of barrier layers comprises a final barrier layer, which is a layer of the active layer that is closest to the p-side semiconductor layer. The p-side semiconductor layer comprises, from an active layer-side, a first p-side semiconductor layer, which is a layer of the p-side semiconductor layer that is closest to the active layer, and a second p-side semiconductor layer containing a p-type dopant and having a bandgap greater than a bandgap of the final barrier layer. The first p-side semiconductor layer has a bandgap smaller than the bandgap of the final barrier layer and greater than a bandgap of any of the well layers, and has a thickness smaller than a thickness of the final barrier layer.

Growing community of inventors

Tokushima, Japan

Makoto Abe