Renesas Electronics Corporation

Nec Corporation

Makiko Oshida

Takashi Nakagawa

Nobuyuki Ikarashi

Toru Tatsumi

Kaoru Mori

Kensuke Takahashi

Kenzo Manabe

Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1&#x2212;x): x (0.01&#x2266;x&#x2266;0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure.

Capacitor, semiconductor device having the same, and method of producing them

To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1&#x2212;x):x where 0.01&#x2266;x&#x2266;0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.

Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric

A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer

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Tokyo, Japan

Makiko Oshida