Mitsubishi Chemical Corporation

Tohoku University

The Japan Steel Works, Ltd.

Makiko Kiyomi

Yutaka Mikawa

Yuji Kagamitani

Toru Ishiguro

Yoshihiko Yamamura

To grow a highly pure nitride crystal having a low oxygen concentration efficiently by an ammonothermal method. A process for producing a nitride crystal, which comprises bringing a reactant gas reactive with ammonia to form a mineralizer, and ammonia into contact with each other to prepare a mineralizer in a reactor or in a closed circuit connected to a reactor; and growing a nitride crystal by an ammonothermal method in the presence of the ammonia and the mineralizer.

Process for producing nitride crystal, nitride crystal and apparatus for producing same

To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 &#x3bc;m.

Production method, production vessel and member for nitride crystal

Growing community of inventors

Ushiku, Japan

Makiko Kiyomi