Kabushiki Kaisha Toshiba

Makiko Katano

Ayako Mizuno

Yuji Yamada

Shoko Ito

Chikashi Takeuchi

Katsuya Okumura

Hisashi Kaneko

Masahiro Kiyotoshi

Mitsuhiro Omura

Takuya Kono

Atsuko Kawasaki

Haruko Akutsu

Takaya Matsushita

Akira Kuramoto

Tomoyo Naito

Eri Uemura

Asuka Uchinuno

In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

Analytical apparatus, sample holder and analytical method

According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

Impurity analysis device and method

A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Sample contamination method

A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

Method for manufacturing electronic device

An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

Immersion lithography apparatus and exposure method

A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

Method of manufacturing semiconductor device

A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.

Growing community of inventors

Yokohama, Japan

Makiko Katano