Mitsubishi Chemical Corporation

Makiko Hashimoto

Kenji Shimoyama

Kazumasa Kiyomi

Nobuyuki Hosoi

Katsushi Fujii

Yoshihito Sato

In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

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Ushiku, Japan

Makiko Hashimoto