Tohoku University

Sumitomo Electric Industries, Limited

Maki Suemitsu

Yasunori Tateno

Hirokazu Fukidome

Masaki Ueno

Fuminori Mitsuhashi

Masaya Okada

Hiroyuki Nagasawa

Takashi Ishizuka

Yoshihiro Tsukuda

Hideki Nakazawa

A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20&#xb0; or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G' of 40 cmor less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Stacked body including graphene film and electronic device including graphene film

A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20&#xb0; or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 &#x3bc;m or more and 100 &#x3bc;m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Stacked body and electronic device

A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.

SiC structure, semiconductor device having SiC structure, and process of forming the same

An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, and a source electrode, a drain electrode, and a gate insulating film on the graphene layer. The electron device further includes a first gate electrode on the gate insulating film between the source electrode and the drain electrode, and a second gate electrode within the substrate. For the second gate electrode, another gate insulating film is on the graphene layer, or alternatively, a part of the substrate is interposed between the second gate electrode and the channel layer.

Semiconductor device

A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G'/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Laminated body and electronic device

A field effect transistor (FET) with a graphene layer as a channel layer is disclosed. The FET provides two gate electrodes, one of which receives the gate bias, while, the other receives a reference bias. An intermediate electrode made of ohmic metal to the graphene layer is provided between the two gate electrodes. The second gate electrode receiving the reference bias suppresses the hole injection into the channel beneath the first gate electrode.

Semiconductor device with graphene layer as channel

An organic silicon gas having Si&mdash;H bond and Si&mdash;C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si&mdash;H bond and Si&mdash;C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure.

Growing community of inventors

Sendai, Japan

Maki Suemitsu