Other

Hitachi, Ltd.

Elpida Memory, Inc.

Hitachi Microcomputer System, Ltd.

Maki Shimoda

Shuji Ikeda

Norio Suzuki

Masayuki Kojima

Norio Ishitsuka

Kozo Watanabe

Yasuko Yoshida

Atsushi Ogishima

Keiji Okamoto

Akira Takamatsu

Shinichi Horibe

Hiroyuki Ichizoe

Hirohiko Yamamoto

Kazuyuki Suko

Tadanori Yoshida

Ryouichi Furukawa

Masayuki Ishizaka

Koichi Saitoh

Masayuki Hiranuma

Masao Kamahori

Yoshiaki Yazawa

Sukeyoshi Tsunekawa

Haruo Itoh

Akio Saito

Kazuhiko Kawai

Katsuhiko Itoh

Koutarou Koizumi

Disclosed is a biomolecular detection device that can be used easily, at a low operating cost, and with a detection probe that can be immobilized easily. Using an insulated gate field effect transistor having a conductive electrode on the gate insulator between a source and a drain, a probe for detecting biomolecules is immobilized on the surface of the conductive electrode. For analysis, a conductive electrode on which a probe for detecting biomolecules is immobilized on the surface, and a reference electrode are placed in the sample solution in the analytical cell, an alternating current voltage is applied from a power source to the reference electrode and the electrical characteristics of the insulated gate field effect transistor that changes before and after binding of the measurement target substance such as DNA and proteins included in the sample solution with a probe for detecting biomolecules, namely the changes in the current values running between the source and the drain, are detected.

Apparatus and method for measuring biological material

A semiconductor integrated circuit device is provided which includes an active region, a shallow groove isolation adjacent to the active region, and a semiconductor element formed in the active region and having a gate. The sum of a width of the active region and a width of the shallow groove isolation constitutes a minimum pitch in the direction of a gate width of the gate, and the width of the active region is set larger than one-half of the minimum pitch.

Semiconductor integrated circuit device and a method of manufacturing the same

Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film A is deposited in the trenches made in a silicon oxide film . A photoresist film is then formed on the amorphous silicon film A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film , thereby exposing to light those parts of the photoresist film which lie outside the trenches . The other parts of the photoresist film , which lie in the trenches are not exposed to light because the light reaching them is inadequate. Further, the photoresist film is developed thereby removing those parts of the film which lie outside the trenches and which have been exposed to light. Thereafter, those parts of the amorphous silicon film A, which lie outside the trenches , are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film which remain in the trenches

Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate

Grooves are defined in a substrate having device isolation regions by dry etching using silicon nitride films and side wall spacers as masks. Thereafter, the side wall spacers lying on side walls of the silicon nitride films are removed and the substrate is subjected to thermal oxidation, whereby the surface of the substrate at a peripheral portion of each active region is subjected to so-called round processing so as to have a sectional shape having a convex rounded shape.

Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing

Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film A is deposited in the trenches made in a silicon oxide film A photoresist film is then formed on the amorphous silicon film A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches The other parts of the photoresist film which lie in the trenches are not exposed to light because the light reaching them is inadequate. Further, the photoresist film is developed thereby removing those parts of the film which lie outside the trenches and which have been exposed to light. Thereafter, those parts of the amorphous silicon film A, which lie outside the trenches are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film which remain in the trenches

Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate

According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

Removal method of organic matter and system for the same

Growing community of inventors

Hachiouji, Japan

Maki Shimoda