Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Maki Miyazaki

Kentaro Matsunaga

Seiro Miyoshi

According to one embodiment, a semiconductor storage device includes: a first stacked body in which a plurality of conductive layers are stacked via a first insulating layer, the first stacked body having a first stepped portion and a second stepped portion in which end portions of the plurality of conductive layers are formed in a step shape in a lower layer; a second stacked body in which a plurality of second insulating layers are stacked via a third insulating layer, the second stacked body having a third stepped portion in which end portions of the plurality of second insulating layers in an identical level as the conductive layers forming the first stepped portion are formed in a step shape. The first stepped portion and the third stepped portion oppose each other, and the second stepped portion and the third stepped portion overlap each other at least partially in a top view.

Semiconductor storage device and method for manufacturing semiconductor storage device

According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose peripheral areas are surrounded by the spacer film. Then, the core pattern and the embedded layer are removed simultaneously. Subsequently, using the spacer pattern as a mask, the hard mask layer and the process object are processed.

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Yokkaichi, Japan

Maki Miyazaki