Asahi Kasei Kabushiki Kaisha

Tokai National Higher Education and Research System

Idemitsu Kosan Company, Limited

National University Corporation Tokai National Higher Education and Research System

Maki Kushimoto

Hiroshi Amano

Ziyi Zhang

Shigekazu Tomai

Chiaki Sasaoka

Yoshio Honda

Yoshihiro Ueoka

Satoshi Katsumata

Manato Deki

A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10S/cm or more.

Light emitting device with electrode having specified molar ratio of magnesium to zinc

A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S).

Method of producing ultraviolet laser diode, and ultraviolet laser diode

An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Method for manufacturing optical device and optical device

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Nagoya, Japan

Maki Kushimoto