Hitachi Chemical Company, Ltd.

Maki Inada

Yasushi Kumashiro

Hiroshi Yokota

Hideo Nakako

Tomoko Higashiuchi

Nobuaki Takane

Kyoko Kuroda

Masashi Yamaura

Naoki Maruyama

Kazunori Yamamoto

Shunya Yokosawa

Takaaki Noudou

Yoshinori Ejiri

Katsuyuki Masuda

Kazuyuki Kamo

The invention provides a composition set comprising: a conductor layer-forming composition comprising a dispersing medium and inorganic particles comprising a metallic oxide; and a conductive adhesive composition comprising a binder and conductive particles having a number average particle size of from 1 nm to 3000 nm.

Composition set, conductive substrate and method of producing the same, and conductive adhesive composition

There is provided a liquid composition that can form a resistor exhibiting a stable resistance value. One mode of the liquid composition of the invention is a liquid composition comprising (a) an epoxy resin, (b) carbon black particles, (c) carbon nanotubes and (d) a solvent with a vapor pressure of less than 1.34&#xd7;10Pa at 25&#xb0; C.

Liquid composition, and resistor film, resistor element and circuit board

There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step.

Optical semiconductor device production method and optical semiconductor device

An etching material including at least one boron compound selected from a Lewis acid that includes, in its structure, boron and a halogen that is bonded to the boron, a salt of the Lewis acid and a compound that generates the Lewis acid.

Etching material

An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.

Optical semiconductor device

Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120&#xb0; C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.

Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition

The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Growing community of inventors

Tsukuba, Japan

Maki Inada