Mitsubishi Electric Corporation

Maki Hasegawa

Shuhei Yokoyama

Hisashi Kawafuji

Toru Iwagami

Shigeru Mori

Masahiro Kato

Shinya Nakagawa

Shogo Shibata

Takuya Shiraishi

Naoki Ikeda

Hisashi Oda

Shinji Sakai

Hiroyuki Nakamura

Koichiro Noguchi

Kosuke Yamaguchi

Masataka Shiramizu

Seiya Sugimachi

A method for manufacturing a semiconductor device according to the present invention includes the steps of (a) preparing a lead frame including a power chip die pad to which two terminals are connected, a control element die pad to which one terminal is connected, and tie bar portions connecting between a plurality of terminals including the two terminals, (b) placing a power chip and a free wheel diode on the power chip die pad and placing ICs on the control element die pad, (c) encapsulating in a mold resin to allow the tie bar portions to be exposed outside and a plurality of terminals including the two terminals and the one terminal to protrude outward, and (d) removing the tie bar portions other than the tie bar portions connecting the two terminals.

Method for manufacturing semiconductor device and semiconductor device

A semiconductor module includes: a semiconductor element; a first lead frame including a first portion on which the semiconductor element is mounted; a sealing member sealing the semiconductor element and the first portion; and a heat dissipation member which is integrated with the sealing member and dissipates heat generated in the semiconductor element. The heat dissipation member is insulated from the semiconductor element and the first portion by the sealing member. Therefore, the semiconductor module that is applicable to vertical semiconductor elements and ensures electrical insulation between the semiconductor element and the heat dissipation member when implementing the semiconductor module onto a circuit board, can be provided.

Semiconductor module and semiconductor device

The present invention is a semiconductor module including: first and second drive circuits that perform drive control of at least one pair of first and second switching devices, in which the at least one pair of first and second switching devices and the first and second drive circuits are sealed in a package having a rectangular shape in plan view, and there are provided: a control terminal provided to protrude from a side surface of a first long side out of first and second long sides of the package, and to which a control signal of the first and second drive circuits is inputted; an output terminal provided to protrude from a side surface of the second long side; a first main terminal provided to protrude from a side surface of a first short side out of first and second short sides of the package; and a second main terminal provided to protrude from a side surface of the second short side.

Package and terminal arrangement for semiconductor module

A power module includes: a power chip; a control chip controlling the power chip; a power terminal connected to the power chip; a control terminal connected to the control chip; and a package covering the power chip, the control chip, the power terminal, and the control terminal with mold resin, wherein first and second recesses for attaching a fin are respectively provided on side faces facing each other of the package from which neither the power terminal nor the control terminal protrudes, and the first and second recesses are arranged not at positions opposite to each other but alternately.

Power module

It is an object to provide a technique capable of providing a semiconductor device with information indicating a plurality of electrical characteristics. A semiconductor device sorting system includes a characteristic measurement unit measuring electrical characteristics of a semiconductor device, a rank determination database for classifying the electrical characteristics into ranks, a calculation unit classifying the plurality of electrical characteristics of the semiconductor device measured by the characteristic measurement unit into a plurality of ranks with reference to the rank determination database, a writing unit converting the plurality of ranks classified by the calculation unit into a graphic symbolic code and forming the graphic symbolic code on the semiconductor device, a reading unit reading the plurality of ranks from the graphic symbolic code formed on the semiconductor device, and a sorting unit sorting the semiconductor device based on the plurality of ranks being read by the reading unit.

Semiconductor device sorting system and semiconductor device

Semiconductor device

A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Method for manufacturing power module

A semiconductor module includes a die pad area between positions where a plurality of power terminals are arranged and positions where an HVIC and an LVIC are arranged. A plurality of RC-IGBTs are arranged in the die pad area at positions closer to the plurality of power terminals than to the HVIC and the LVIC.

Semiconductor module

A power module includes a connection terminal for external connection, the connection terminal protruding from the side surface of a package, and a dummy terminal protruding from the side surface of the package and shorter than the connection terminal. The dummy terminal is processed to have a bottom surface with an inclination. In other words, the distance between a plane containing a heat dissipation surface of the package and the dummy terminal increases toward the extremity of the dummy terminal. Accordingly, when a heat dissipation fin is attached to the heat dissipation surface, the extremity of the dummy terminal is more distant from the heat dissipation fin than the rest of the dummy terminal.

Growing community of inventors

Tokyo, Japan

Maki Hasegawa