Sumitomo Electric Industries, Limited

Renesas Electronics Corporation

Maki Hamada

Shinji Kimura

So Tanaka

Shunsuke Yamada

Masayuki Kobayashi

Masaki Kijima

Daisuke Hamajima

The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.

Silicon carbide semiconductor device having gate electrode

Growing community of inventors

Hitachinaka, Japan

Maki Hamada