Fujimi Incorporated

Maki Asada

Kohsuke Tsuchiya

Shuhei Takahashi

Yoshio Mori

Hisanori Tansho

Taiki Ichitsubo

Yusuke Suga

Satoshi Momota

Megumi Taniguchi

The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step P. In this polishing method, the final polishing step Phas a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, a polishing sub-step provided before the polishing sub-step Pin the plurality of polishing sub-steps is a polishing sub-step Pof polishing using a polishing composition S, and the polishing composition Ssatisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sobtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sobtained in the standard test 1, and condition (B): the polishing composition Scontains an abrasive A, a basic compound B, and hydroxyethyl cellulose.

Method of polishing object to be polished containing material having silicon-silicon bond

The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

Polishing composition and polishing method using same

Provided is a polishing composition that includes a cellulose derivative and is effective for reducing surface defects after polishing. According to the present application, a polishing composition comprising an abrasive, a basic compound and a surface protective agent is provided. The surface protective agent contains a cellulose derivative and a vinyl alcohol-based dispersant. The surface protective agent has a dispersibility parameter &#x3b1; of less than 100.

Polishing composition

The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least &#x2212;100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.

Abrasive composition and method for producing semiconductor substrate

A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more.

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Kiyosu, Japan

Maki Asada