Sumitomo Electric Industries, Limited

Sumitomo Electric Device Innovations, Inc.

Makato Kiyama

Ken Nakata

Masaya Okada

Seiji Yaegashi

There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n-type GaN substratehaving a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n-type GaN drift layerin a first region R, and an SBD having an anode electrode in a second region R, the anode electrode being in Schottky contact with the d-type GaN drift layer. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n-type GaN substrate

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Osaka, Japan

Makato Kiyama