International Business Machines Corporation

Majid Ghafghaichi

Chi Shih Chang

John Balyoz

Teh-Sen Jen

John A Palmieri

Donald B Mooney

Theodore H Baker

Hans Wimpfheimer

Barry C Fox

Hormazdyar M Dalal

Lucian A Kasprzak

Richard Charles Stevens

Daniel Tuman

Keith G Barkley

Yelandur R Gopalakrishna

Albert J Tzou

Master image chip organization technique or method

This serial to parallel to serial (SPS) charge coupled device (CCD) shift register memory has a serial output shift register with gate electrode structures that are interdigitated with the gate electrode structures of each last stage of a plurality of parallel shift registers to transfer interlaced data bits from the parallel shift registers to the serial output register in a sequential order.

Serial parallel charge coupled device employing a gate splitting device

Disclosed are improved LSI semiconductor design structures termed 'Master Image Chip Organization Techniques'. Utilizing the technique provides increased density and optimized performance of semiconductor devices, circuits, and part number functions. In accordance with the disclosed Master Image Chip Organization Method the semiconductor chips are optimally structured to facilitate the maximum number of devices and circuits, and to facilitate fabrication of a wide variety of LSI part numbers. Essentially, none of the semiconductor surface is dedicated for signal and power wiring channels. A master image wiring structure is provided which resides over the semiconductor surface and beneath a power surface. In addition, the master image wiring structure provides a means for personalizing power and signal wiring for a multiple power surface structure. The combined master image structure provides a means for optimally allocating semiconductor area for devices, functional units (micro and macro) and signal and power wiring to facilitate improved density and performance.

Disclosed is an improved masterslice design technique including structure, wiring, and method of fabricating, to provide improved Large Scale Integrated Devices. In accordance with the improved masterslice technique a plurality of semiconductor chips are provided wherein essentially the entire semiconductor surface area of each chip is utilized to provide cells selectable to be personalized (wired). None of the semiconductor surface area is dedicated for wiring channels. The individual cell area and cell configuration is optimally arrived at to facilitate wiring the maximum number, if not all of the cells contained on each chip, whereby circuit density is materially improved and a wide variety LSI device part numbers may be readily fabricated.

LSI Semiconductor device and fabrication thereof

A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

Method for fabricating tantalum semiconductor contacts

Tantalum semiconductor contacts and method for fabricating same

A method of planarizing an electrically insulative layer formed over a non-planar integrated circuit substrate having raised portions. After the electrically insulative layers are deposited over such substrate, the layer has elevations corresponding to the underlying raised portions of the substrate. A masking layer is formed on the electrically insulative layer having at least one opening therethrough coincident with an elevation in the insulative layer; this opening has smaller lateral dimensions than the coincident elevation, thereby facilitating alignment. The elevation in the insulative layer exposed in said at least one opening is then etched to the level of the unelevated portion of the layer, and the insulative layer is then resputtered for a period of time sufficient to planarize the remainder of such etched elevation to the level of the unelevated portions.

Planarizing insulative layers by resputtering

A method for determining whether an integrated circuit chip containing a plurality of separable circuits is operable when one or more of the separable circuits is not functional. A chip including a plurality of discrete or separable circuits, each of which include means for selectively receiving and distributing a voltage level necessary to render the particular circuit operable, the chip further including a region of one type conductivity at said voltage level common to all of the discrete circuits is tested by a method which will insure that short-circuits between a particular circuit found not to be functional and therefore not to be rendered operable and the common region will not inadvertently apply the voltage level from the common region to voltage receiving and distribution means in the non-functional circuit. All the discrete circuits are first tested to determine which are functional. Then those circuits which fail the functionality test are tested further to detect whether any of these failed circuits have electrical short-circuits between the common region and the means for receiving and distributing said operable voltage level in the failed circuit. If any of the failed circuits have such a short, the chip is considered to be inoperative because such a short will inadvertently connect the failed circuit with the functional circuits.

Integrated circuit structure having a plurality of separable circuits

A planar integrated semiconductor circuit master-slice structure in which the insulation layer over the planar surface remains intact and free of undesirable short-circuit paths in the area beneath excess 'unused' contact terminals which are not part of the selected circuit configuration formed by a selected surface metallization pattern on the insulative layer which selectively interconnects less than all of the contact terminals with less than all of the components extending from the planar surface of a semiconductor substrate beneath the insulative layer. During D.C. sputter cleaning or etching utilized in the formation of the contact terminals and the metallization pattern, there is an undesirable charge accumulation on the unused contact terminals which tends to exceed the dielectric breakdown strength of the insulative layer beneath the terminal. This shorts the unused pad to the semiconductor substrate beneath the terminal. Such short-circuits are avoided by an additional metallization line, not part of the circuit configuration, which connects the unused contact terminal to an unused electrically isolated component e.g. junction isolated component in the semiconductor substrate.

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Poughkeepsie, NY, United States of America

Majid Ghafghaichi