Advanced Micro Devices Corporation

Majed Valad Beigi

Sudhanva Gurumurthi

Yasuko Eckert

Vilas K Sridharan

Amin Farmahini-Farahani

Dongping Zhang

A processing system employs techniques for enhancing dynamic random access memory (DRAM) page retirement to facilitate identification and retirement of pages affected by multi-page DRAM faults. In response to detecting an uncorrectable error at a first page of DRAM, the processing system identifies a second page of the DRAM for potential retirement based on one or more of physical proximity to the first page, inclusion in a range of addresses stored at a fault map that tracks addresses of DRAM pages having detected faults, and predicting a set of pages to check for faults based on misses at a translation lookaside buffer (TLB).

Page retirement techniques for multi-page DRAM faults

Systems and methods for efficiently routing qubits in a quantum computing system include selecting bubble nodes and routing qubits to the bubble nodes. The systems and methods further include dividing a system of nodes into regions and selecting a bubble node for each region. The systems and methods further include using super bubble nodes with reliable links connected to other super bubble nodes and bubble nodes to improve cross-region operations.

Variation-aware qubit movement scheme for noise intermediate scale quantum era computers

Techniques for performing in-memory matrix multiplication, taking into account temperature variations in the memory, are disclosed. In one example, the matrix multiplication memory uses ohmic multiplication and current summing to perform the dot products involved in matrix multiplication. One downside to this analog form of multiplication is that temperature affects the accuracy of the results. Thus techniques are provided herein to compensate for the effects of temperature increases on the accuracy of in-memory matrix multiplications. According to the techniques, portions of input matrices are classified as effective or ineffective. Effective portions are mapped to low temperature regions of the in-memory matrix multiplier and ineffective portions are mapped to high temperature regions of the in-memory matrix multiplier. The matrix multiplication is then performed.

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Santa Clara, CA, United States of America

Majed Valad Beigi