Asml Netherlands B.v.

Asml Holding N.v.

Maikel Robert Goosen

Albertus Victor Gerardus Mangnus

Ralph Brinkhof

Erwin Paul Smakman

Patricius Aloysius Jacobus Tinnemans

Simon Gijsbert Josephus Mathijssen

Franciscus Godefridus Casper Bijnen

Hakki Ergün Cekli

Edo Maria Hulsebos

Henricus Johannes Lambertus Megens

Weitian Kou

Willem Seine Christian Roelofs

Hadi Yagubizade

Loek Johannes Petrus Verhees

Wendy Johanna Martina Van De Ven

Manouk Rijpstra

Ahmet Koray Erdamar

Matthijs Cox

Tran Thanh Thuy Vu

Boris Menchtchikov

Yan Ren

Sudharshanan Raghunathan

Maaike Van't Westeinde

Arie Jeffrey Den Boef

Maurits Van Der Schaar

Arno Jan Bleeker

Pieter Willem Herman De Jager

Paul Christiaan Hinnen

Bartolomeus Petrus Rijpers

Lucas Kuindersma

Shakeeb Bin Hasan

Vassili Demergis

Adam Lassise

Yifeng Shao

Maaike Van T Westeinde

Hakki Ergun Cekli

Disclosed among other aspects is a charged particle inspection system including a phaseplate configured and arranged to modify the local phase of charged particles in a beam to reduce the effects of lens aberrations. The phaseplate is made up of an array of apertures with the voltage and/or a degree of obscuration of the apertures being controlled individually or in groups.

Apparatus for and method of local control of a charged particle beam

A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.

Systems and methods of determining aberrations in images obtained by a charged-particle beam tool

Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

Systems and methods of profiling charged-particle beams

Embodiments consistent with the disclosure herein include methods for image enhancement for a multi-beam charged-particle inspection system. Systems and methods consistent with the present disclosure include analyzing signal information representative of first and second images, wherein the first image is associated with a first beam of a set of beams and the second image is associated with a second beam of the set of beams; detecting, based on the analysis, disturbances in positioning of the first and second beams in relation to a sample; obtaining an image of the sample using the signal information of the first and second beams; and correcting the image of the sample using the identified disturbances.

Systems and methods for image enhancement for a multi-beam charged-particle inspection system

Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

Pulsed charged-particle beam system

Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer and a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate.

Apparatus for and method of controlling an energy spread of a charged-particle beam

Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.

Aperture array with integrated current measurement

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

A method of determining positions of marks, the marks comprising periodic structures, at least some of the structures comprising periodic sub-structures, the sub-structures having a smaller period than the structures, the marks formed with positional offsets between the sub-structures and structures, the positional offsets caused by a combination of both known and unknown components, the method comprising illuminating a plurality of the marks with radiation having different characteristics, detecting radiation diffracted by the marks using one or more detectors which produce output signals, discriminating between constituent parts of the signals, the discriminating based on a variation of the signals as a function of spatial positions of the marks on a substrate, selecting at least one of the constituent parts of the signals, and using the at least one selected constituent part, and information relating to differences between the known components, to calculate a corrected position of at least one mark.

Mark position determination method

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation () incident at an oblique angle (&#x3b8;). The focus metrology pattern comprises a periodic array of groups of first features (). A spacing (S) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second featuresmay be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.

Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method

A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.

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Eindhoven, Netherlands

Maikel Robert Goosen