Litef Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Endress+hauserse+co. Kg

Technische Universitaet Chemnitz

Robert Boschgmbh

Maik Wiemer

Axel Franke

Thomas Gessner

Eberhard Handrich

Bruno F Ryrko

Martin Hafen

Egbert Vetter

Anh Tuan Tham

Benjamin Lemke

Achim Trautmann

Peter Leinfelder

Uwe Breng

Sonja Knies

Karla Hiller

Joerg Froemel

Jorg Brauer

Detlef Billep

Bruno Rvrko

Jan Besser

Emmy Törker

Joerg Braeuer

Claudia Keibler-Willner

Mario Baum

Franz Selbmann

Lutz Hofmann

Holger Letsch

Ando Feyh

Knut Gottfried

A layer system includes barrier properties against oxygen and water vapor. There may be an alternating layer system of at least two aluminum oxide layers and at least two titanium oxide layers. The aluminum oxide layers and the titanium oxide layers are deposited alternately on top of one another. The aluminum oxide layers and the titanium oxide layers are deposited by ALD layer deposition with a layer thickness of 5 nm to 20 nm. A first Parylene layer is deposited with a layer thickness of 0.1 μm to 50 μm on a first side of the alternating layer system by CVD.

Barrier layer system and method for producing a barrier layer system

A component arrangement comprising a first component which has a first joining surface and a second component which has a second joining surface. The first joining surface is connected to the second joining surface using an integrated reactive material system. The integrated reactive material system comprises at least one coating of at least one of the joining surfaces, and the integrated reactive material system comprises an activation region on one surface. The integrated activation region is arranged outside of the joined together regions of the first or second joining surfaces and adjoins the regions which are joined together.

Component arrangement with at least two components and method for producing a component arrangement

A microstructure has at least one bonding substrate and a reactive multilayer system. The reactive multilayer system has at least one surface layer of the bonding substrate with vertically oriented nanostructures spaced apart from one another. Regions between the nanostructures are filled with at least one material constituting a reaction partner with respect to the material of the nanostructures. A method for producing at least one bonding substrate and a reactive multilayer system, includes, for forming the reactive multilayer system, at least one surface layer of the bonding substrate is patterned or deposited in patterned fashion with the formation of vertically oriented nanostructures spaced apart from one another, and regions between the nanostructures are filled with at least one material constituting a reaction partner with respect to the material of the nanostructures. A microsystem is formed from two bonding substrates and a construction lying between the bonding substrates, the construction having a reacted reactive layer system. The microsystem is a sensor coated with biomaterial and/or has elements composed of polymeric material and/or at least one magnetic and/or piezoelectric and/or piezoresistive component.

Microstructure with reactive bonding

A method for producing a silicon torsion spring capable, for example, of reading the rotation rate in a microstructured torsion spring/mass system. The system that is produced achieves a low torsional stiffness compared to a relatively high transverse stiffness in the lateral and vertical directions. The method proceeds from a wafer or wafer composite and, upon suitable mask coverage, a spring with a V-shaped cross section is formed by anisotropic wet-chemical etching which preferably extends over the entire wafer thickness and is laterally delimited only by [111] planes. Two of the wafers or wafer composites prepared in this way are rotated through 180&#xb0; and joined to one another oriented mirrorsymmetrically with respect to one another, so that overall the desired X-shaped cross section is formed.

Method for producing a torsion spring

A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a .mu.B device characterized by extremely small leakage capacitances and high temperature stability.

Micromechanical accelerometer with plate-like semiconductor wafers

A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin semiconductor material oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a .mu.B device characterized by extremely small leakage capacitances and high temperature stability.

Micromechanical accelerometer and method of manufacture thereof

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Limbach-Oberfrohna, Germany

Maik Wiemer